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Paper Abstract and Keywords
Presentation 2017-07-07 13:25
Co2FeSi/Mn3Ge bilayered films with perpendicular magnetic anisotropy for magnetic tunnel junction
Taishi Yabushita, Naoki Matsushita, Yota Takamura (Tokyo Tech), Yoshiaki Sonobe (Samsung R&D Institute Japan), Shigeki Nakagawa (Tokyo Tech)
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Conference Information
Committee IEICE-MRIS MMS  
Conference Date 2017-07-07 - 2017-07-07 
Place (in Japanese) (See Japanese page) 
Place (in English) Tokyo Tech 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Solid State Memory, Media, etc. 
Paper Information
Registration To IEICE-MRIS 
Conference Code 2017-07-MR-MMS 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Co2FeSi/Mn3Ge bilayered films with perpendicular magnetic anisotropy for magnetic tunnel junction 
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1st Author's Name Taishi Yabushita  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
2nd Author's Name Naoki Matsushita  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
3rd Author's Name Yota Takamura  
3rd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
4th Author's Name Yoshiaki Sonobe  
4th Author's Affiliation Samsung R&D Institute Japan (Samsung R&D Institute Japan)
5th Author's Name Shigeki Nakagawa  
5th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
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Date Time 2017-07-07 13:25:00 
Presentation Time 25 minutes 
Registration for IEICE-MRIS 
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Volume (vol) vol.41 
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