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Paper Abstract and Keywords
Presentation 2017-07-31 10:40
A 65 nm 1.0V 1.84ns Silicon-on-Thin-Box (SOTB) Embedded SRAM with 13.72 nW/Mbit Standby Power for Smart IoT
Makoto Yabuuchi, Koji Nii (Renesas), Shinozaki Yoshihiro (NSW), Yoshiki Yamamoto, Takumi Hasegawa, Hiroki Shinkawata, Shiro Kamohara (Renesas)
Abstract (in Japanese) (See Japanese page) 
(in English) (Not available yet)
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Conference Information
Committee IEICE-SDM IEICE-ICD IST  
Conference Date 2017-07-31 - 2017-08-02 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido-Univ. Multimedia Education Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low voltage/low power techniques, novel devices, circuits, and applications 
Paper Information
Registration To IEICE-ICD 
Conference Code 2017-07-SDM-ICD-IST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A 65 nm 1.0V 1.84ns Silicon-on-Thin-Box (SOTB) Embedded SRAM with 13.72 nW/Mbit Standby Power for Smart IoT 
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1st Author's Name Makoto Yabuuchi  
1st Author's Affiliation Renesas Electronics Corporation (Renesas)
2nd Author's Name Koji Nii  
2nd Author's Affiliation Renesas Electronics Corporation (Renesas)
3rd Author's Name Shinozaki Yoshihiro  
3rd Author's Affiliation Nippon Systemware Co. Ltd. (NSW)
4th Author's Name Yoshiki Yamamoto  
4th Author's Affiliation Renesas Electronics Corporation (Renesas)
5th Author's Name Takumi Hasegawa  
5th Author's Affiliation Renesas Electronics Corporation (Renesas)
6th Author's Name Hiroki Shinkawata  
6th Author's Affiliation Renesas Electronics Corporation (Renesas)
7th Author's Name Shiro Kamohara  
7th Author's Affiliation Renesas Electronics Corporation (Renesas)
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Date Time 2017-07-31 10:40:00 
Presentation Time 25 minutes 
Registration for IEICE-ICD 
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Volume (vol) vol.41 
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