| Paper Abstract and Keywords |
| Presentation |
2018-03-09 16:15
[Invited Talk]
SOI monolithic pixel technology for radiation image sensor
Yasuo Arai, Toshinobu Miyoshi, Ikuo Kurachi (KEK) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
Silicon-On-Insulator (SOI) technology is a suitable choice to realize monolithic radiation imaging device as it involves a separate thick silicon layer in addition to a circuit layer. However, there are several issues to overcome for using radiation sensors and CMOS LSI circuits on a same die, i.e., the back-gate effect, coupling between sensors and circuits, and the total ionization dose (TID) effect. These issues have been solved by introducing a middle Si layer between the sensor and circuit layer (double SOI). By introducing multiple buried layer, lower noise and high charge collection efficiency is obtained. In addition, a small pixel size is achieved by using the PMOS and NMOS active merge technique in the SOI. This enables a much smaller layout size than that in the bulk CMOS process with the same feature size. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
X-ray / Quantum Beam / Silicon-On-Insulator / SOI / Image Sensor / 3D Integration / / |
| Reference Info. |
ITE Tech. Rep., vol. 42, no. 10, IST2018-25, pp. 61-66, March 2018. |
| Paper # |
IST2018-25 |
| Date of Issue |
2018-03-02 (IST) |
| ISSN |
Print edition: ISSN 1342-6893 Online edition: ISSN 2424-1970 |
| Download PDF |
|
| Conference Information |
| Committee |
IST |
| Conference Date |
2018-03-09 - 2018-03-09 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
NHK Housou-Gijyutu Lab. |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
Image Sensors, etc. |
| Paper Information |
| Registration To |
IST |
| Conference Code |
2018-03-IST |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
SOI monolithic pixel technology for radiation image sensor |
| Sub Title (in English) |
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| Keyword(1) |
X-ray |
| Keyword(2) |
Quantum Beam |
| Keyword(3) |
Silicon-On-Insulator |
| Keyword(4) |
SOI |
| Keyword(5) |
Image Sensor |
| Keyword(6) |
3D Integration |
| Keyword(7) |
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| Keyword(8) |
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| 1st Author's Name |
Yasuo Arai |
| 1st Author's Affiliation |
High Energy Accelerator Research Organization (KEK) |
| 2nd Author's Name |
Toshinobu Miyoshi |
| 2nd Author's Affiliation |
High Energy Accelerator Research Organization (KEK) |
| 3rd Author's Name |
Ikuo Kurachi |
| 3rd Author's Affiliation |
High Energy Accelerator Research Organization (KEK) |
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| Speaker |
Author-1 |
| Date Time |
2018-03-09 16:15:00 |
| Presentation Time |
25 minutes |
| Registration for |
IST |
| Paper # |
IST2018-25 |
| Volume (vol) |
vol.42 |
| Number (no) |
no.10 |
| Page |
pp.61-66 |
| #Pages |
6 |
| Date of Issue |
2018-03-02 (IST) |
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