(4) 11:30 - 11:50
A 2.1μm High Dynamic Range CMOS Image Sensor with Sub-pixel and Lateral Overflow Integration Capacitor Architecture
○Shunta Noguchi・Satoko Iida・Naoya Sato・Shinichiro Izawa・Takayuki Yamanaka・Yorito Sakano・Yusuke Oike（Sony）
−−− 休憩 （ 100分 ） −−−
(5) 13:30 - 13:50
An 8.7Mpixel 240fps CMOS Image Sensor with 4 × 4 Pixel-Block Local Adaptation of Resolution, Frame Rate, and Exposure Time for Scene Adaptive Imaging
○Kohei Tomioka・Kodai Kikuchi・Akira Honji・Takenobu Usui・Kazuya Kitamura（NHK）・Shoji Kawahito（Shizuoka Univ.）
(6) 13:50 - 14:10
Charge domain type 2.2um BSI Global Shutter pixel with Dual Depth DTI Produced by thick-film epitaxial process
○Toshifumi Yokoyama・Yoshihiro Noguchi・Yoshiaki Nishi・Masafumi Tsutsui・Masahiko Takeuchi・Masahiro Oda（TPSCo）・Fenigstein Amos（Tower）
(7) 14:10 - 14:30
12-to-16-bit Column-Parallel CMS-based ADC for High Monotonically Linear Dynamic Range
○De Xing Lioe（SUiCTE, Shizuoka University）・Tomohiro Okuyama（Shizuoka University）・Keita Yasutomi（SUiCTE, Shizuoka University）・Keiichiro Kagawa（Shizuoka University）・Shoji Kawahito（SUiCTE, Shizuoka University）