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=============================================== Technical Group on Information Display (IDY) =============================================== Technical Committee on Electronic Information Displays (IEICE-EID) Chair: Rumiko Yamaguchi (Akita Univ.) Vice Chair: Masahiro Yamaguchi (Tokyo Inst. of Tech.), Tomoyuki Ishihara (Japan Display) Secretary: Munekazu Date (NTT), Mitsuru Nakata (NHK) Assistant: Mutsumi Kimura (Ryukoku Univ.), Tomokazu Shiga (Univ. of Electro-Comm.), Hiroko Kominami (Shizuoka Univ.), Masanobu Mizusaki (SHARP), Masayuki Kanbara (NAIST) =============================================== Technical Committee on Silicon Device and Materials (IEICE-SDM) Chair: Hiroshige Hirano (TowerPartners Semiconductor) Vice Chair: Shunichiro Ohmi (Tokyo Inst. of Tech.) Secretary: Takahiro Mori (AIST), Nobuaki Kobayashi (Nihon Univ.) Assistant: Taiji Noda (Panasonic), Tomoyuki Suwa (Tohoku Univ.) DATE: Wed, Dec 2, 2020 10:00 - 16:45 PLACE: TOPICS: ---------------------------------------- Wed, Dec 2 AM (10:00 - 10:45) ---------------------------------------- (1)/IEICE-EID 10:00 - 10:15 Automation of characteristic measurement of amorphous oxide semiconductor memristors and their effects Ryo Sumida, Ayata Kurasaki, Mutumi Kimura (RU) (2)/IEICE-EID 10:15 - 10:30 Eyeball model experiment of artificial retina using thin film device Naoya Naito, Kouhei Toyoda (Ryukoku Univ.), Yoshio Okano (WetLab Corporation), Mutsumi Kimura (Ryukoku Univ.) (3)/IEICE-EID 10:30 - 10:45 Characterization of amorphous Ga-Sn-O thin film thermoelectric conversion element Yuhei Yamamoto, Tatuya Aramaki, Ryo Ito, Mutumi Kimura (Ryukoku Univ.) ----- Break ( 10 min. ) ----- ---------------------------------------- Wed, Dec 2 PM (10:55 - 12:25) ---------------------------------------- (4) 10:55 - 11:25 (5)/IEICE-EID 11:25 - 11:40 Stacked cross-point memory of synaptic elements using IGZO thin film Etsuko Iwagi (RU), Takumi Tsuno (NAIST), Mutsumi Kimura (RU) (6)/IEICE-EID 11:40 - 11:55 Evaluation of dielectric properties of ferroelectric thin films for neural networks Yuma Ishisaki, Hiroki Umemura, Daiki Matsukawa, Mutsumi Kimura (RU), Eisuke Tokumitsu (JAIST), Kenichi Haga, Toshihiro Doi (MMC) (7)/IEICE-EID 11:55 - 12:10 Investigation of oxide semiconductor thin film synapse using STDP learning method Tetsuya Katagiri, Daiki Yamakawa, Kenta Yatida, Kazuki Morigaki, Mutsumi Kimura (Ryukoku Univ.) (8)/IEICE-EID 12:10 - 12:25 Brain type system using IGZO thin film synapse Yuki Onishi, Yuki Shibayama, Daiki Yamakawa (Ryukoku Univ.), Hiroki Yamane, Yasuhiko Nakajima (NAIST), Mutumi Kimura (Ryukoku Univ./NAIST) ----- Lunch ( 45 min. ) ----- ---------------------------------------- Wed, Dec 2 PM (13:10 - 14:20) ---------------------------------------- (1) 13:10 - 13:40 (2)/IEICE-SDM 13:40 - 14:00 Synthesis of Single Crystal BaTiO3 Nanoparticles for Self-Assembly Technique Misa Yamasaki, Masaki Yamaguchi (Shibaura Inst. of Tech.) (3)/IEICE-SDM 14:00 - 14:20 Improvement of Al2O3/GaN MOS Characteristics using Bilayer Structure Sho Sonehara, Mutsunori Uenuma, Yukiharu Uraoka (NAIST) ----- Break ( 10 min. ) ----- ---------------------------------------- Wed, Dec 2 PM (14:30 - 15:50) ---------------------------------------- (4)/IEICE-EID 14:30 - 15:00 [Special Invited Talk] Defects control in oxide semiconductors at low-temperature and its application to flexible devices Yusaku Magari, Mamoru Furuta (Kochi Univ. of Technol.) (5)/IEICE-SDM 15:00 - 15:20 Coexistence of digital and analog resistive switching in Ta2O5-based ReRAM cells with TiN electrodes. Kazutaka Yamada, Tsunenobu Kimoto (Kyoto Univ.), Yusuke Nishi (Kyoto Univ./NIT, Maizuru College) (6)/IEICE-EID 15:20 - 15:35 Optimization of double-layered ReRAM using Ga-Sn-O thin film Ayata Kurasaki, Kaito Hashimoto, Ryo Sumida, Shihori Akane, Daisuke Makioka, Sumio Sugisaki, Mutsumi Kimura (Ryukoku Univ.) (7)/IEICE-EID 15:35 - 15:50 Phase Change Random Access memory using Cu2GeTe3 Shihori Akane, Mutsumi Kimura (Ryukoku Univ), Isao Horiuchi (KOA Corp) ----- Break ( 10 min. ) ----- ---------------------------------------- Wed, Dec 2 PM (16:00 - 16:45) ---------------------------------------- (8) 16:00 - 16:30 (9)/IEICE-EID 16:30 - 16:45 Ferroelectric gate thin film transistor using oxide semiconductor Ga-Sn-O Tomoki Fukui, Kouki Nakagawa, Mutsumi Kimura (Ryukoku Univ) # Information for speakers General Talk will have 20 minutes for presentation and 5 minutes for discussion. # CONFERENCE SPONSORS: - This conference is co-sponsored by The Japan Society of Applied Physics. === Technical Group on Information Display (IDY) === # FUTURE SCHEDULE: Thu, Jan 28, 2021 - Fri, Jan 29, 2021: [Thu, Nov 19] === Technical Committee on Electronic Information Displays (IEICE-EID) === # FUTURE SCHEDULE: Thu, Jan 28, 2021 - Fri, Jan 29, 2021: [Thu, Nov 19] === Technical Committee on Silicon Device and Materials (IEICE-SDM) === # SECRETARY: SDM Secretary: MORI Takahiro(National Institute of AIST) Tel +81-29-849-1149   -    aist Last modified: 2020-09-24 06:52:17 |
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