| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| IEICE-EID, IEICE-SDM, IDY [detail] |
2020-12-02
10:00 |
Kyoto |
|
Automation of characteristic measurement of amorphous oxide semiconductor memristors and their effects
Ryo Sumida, Ayata Kurasaki, Mutumi Kimura (RU) |
[more] |
|
| IEICE-EID, IEICE-SDM, IDY [detail] |
2020-12-02
10:15 |
Kyoto |
|
Eyeball model experiment of artificial retina using thin film device
Naoya Naito, Kouhei Toyoda (Ryukoku Univ.), Yoshio Okano (WetLab Corporation), Mutsumi Kimura (Ryukoku Univ.) |
[more] |
|
| IEICE-EID, IEICE-SDM, IDY [detail] |
2020-12-02
10:30 |
Kyoto |
|
Characterization of amorphous Ga-Sn-O thin film thermoelectric conversion element
Yuhei Yamamoto, Tatuya Aramaki, Ryo Ito, Mutumi Kimura (Ryukoku Univ.) |
[more] |
|
| IEICE-EID, IEICE-SDM, IDY [detail] |
2020-12-02
11:25 |
Kyoto |
|
Stacked cross-point memory of synaptic elements using IGZO thin film
Etsuko Iwagi (RU), Takumi Tsuno (NAIST), Mutsumi Kimura (RU) |
[more] |
|
| IEICE-EID, IEICE-SDM, IDY [detail] |
2020-12-02
11:40 |
Kyoto |
|
Evaluation of dielectric properties of ferroelectric thin films for neural networks
Yuma Ishisaki, Hiroki Umemura, Daiki Matsukawa, Mutsumi Kimura (RU), Eisuke Tokumitsu (JAIST), Kenichi Haga, Toshihiro Doi (MMC) |
[more] |
|
| IEICE-EID, IEICE-SDM, IDY [detail] |
2020-12-02
11:55 |
Kyoto |
|
Investigation of oxide semiconductor thin film synapse using STDP learning method
Tetsuya Katagiri, Daiki Yamakawa, Kenta Yatida, Kazuki Morigaki, Mutsumi Kimura (Ryukoku Univ.) |
[more] |
|
| IEICE-EID, IEICE-SDM, IDY [detail] |
2020-12-02
12:10 |
Kyoto |
|
Brain type system using IGZO thin film synapse
Yuki Onishi, Yuki Shibayama, Daiki Yamakawa (Ryukoku Univ.), Hiroki Yamane, Yasuhiko Nakajima (NAIST), Mutumi Kimura (Ryukoku Univ./NAIST) |
[more] |
|
| IEICE-EID, IEICE-SDM, IDY [detail] |
2020-12-02
13:40 |
Kyoto |
|
Synthesis of Single Crystal BaTiO3 Nanoparticles for Self-Assembly Technique
Misa Yamasaki, Masaki Yamaguchi (Shibaura Inst. of Tech.) |
[more] |
|
| IEICE-EID, IEICE-SDM, IDY [detail] |
2020-12-02
14:00 |
Kyoto |
|
Improvement of Al2O3/GaN MOS Characteristics using Bilayer Structure
Sho Sonehara, Mutsunori Uenuma, Yukiharu Uraoka (NAIST) |
[more] |
|
| IEICE-EID, IEICE-SDM, IDY [detail] |
2020-12-02
14:30 |
Kyoto |
|
[Special Invited Talk]
Defects control in oxide semiconductors at low-temperature and its application to flexible devices
Yusaku Magari, Mamoru Furuta (Kochi Univ. of Technol.) |
[more] |
|
| IEICE-EID, IEICE-SDM, IDY [detail] |
2020-12-02
15:00 |
Kyoto |
|
Coexistence of digital and analog resistive switching in Ta2O5-based ReRAM cells with TiN electrodes.
Kazutaka Yamada, Tsunenobu Kimoto (Kyoto Univ.), Yusuke Nishi (Kyoto Univ./NIT, Maizuru College) |
[more] |
|
| IEICE-EID, IEICE-SDM, IDY [detail] |
2020-12-02
15:20 |
Kyoto |
|
Optimization of double-layered ReRAM using Ga-Sn-O thin film
Ayata Kurasaki, Kaito Hashimoto, Ryo Sumida, Shihori Akane, Daisuke Makioka, Sumio Sugisaki, Mutsumi Kimura (Ryukoku Univ.) |
[more] |
|
| IEICE-EID, IEICE-SDM, IDY [detail] |
2020-12-02
15:35 |
Kyoto |
|
Phase Change Random Access memory using Cu2GeTe3
Shihori Akane, Mutsumi Kimura (Ryukoku Univ), Isao Horiuchi (KOA Corp) |
[more] |
|
| IEICE-EID, IEICE-SDM, IDY [detail] |
2020-12-02
16:30 |
Kyoto |
|
Ferroelectric gate thin film transistor using oxide semiconductor Ga-Sn-O
Tomoki Fukui, Kouki Nakagawa, Mutsumi Kimura (Ryukoku Univ) |
[more] |
|