| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| IST, IEICE-ICD, IEICE-SDM |
2018-08-07
09:00 |
Hokkaido |
Hokkaido University M Bldg. M151 |
A model and circuit for an early auditory system based on vestibulo-ocular reflex
Tkahiro Ikegami, Masayuki Ikebe, Shinya Takamaeda, Masato Motomura, Tetsuya Asai (Hokkaido Univ.) |
In this study, considering a vestiblio-ocular reflex model, we evaluate bass sound is perceived louder when treble noise... [more] |
IST2018-43
pp.1-4 |
| IST, IEICE-ICD, IEICE-SDM |
2018-08-07
09:25 |
Hokkaido |
Hokkaido University M Bldg. M151 |
Wide-band CMOS terahertz imaging pixel
Yuri Kanazawa, Shota HIramatsu, Eiichi Sano, Sayuri Yokoyama, Masayuki Ikebe (Hokkaido Univ) |
We propose a Si–CMOS terahertz image sensor to solve the paucity of low-cost detectors. Here the
imager chip consists o... [more] |
IST2018-44
pp.5-9 |
| IST, IEICE-ICD, IEICE-SDM |
2018-08-07
09:50 |
Hokkaido |
Hokkaido University M Bldg. M151 |
[Invited Talk]
Nano probe technology for sensing and its applications
Kazuhisa Sueoka (Hokkaido Univ) |
[more] |
IST2018-45
|
| IST, IEICE-ICD, IEICE-SDM |
2018-08-07
10:45 |
Hokkaido |
Hokkaido University M Bldg. M151 |
[Invited Talk]
Energy Harvesting Beat Sensors and Potential Applications
-- Low Power, Low cost and High precision IoT Sensors --
Koichiro Ishibashi (UEC) |
[more] |
|
| IST, IEICE-ICD, IEICE-SDM |
2018-08-07
11:30 |
Hokkaido |
Hokkaido University M Bldg. M151 |
Comparison of Sensitivity to Soft Errors of NMOS and PMOS Transistors by Using Three Types of Stacking Latches in an FDSOI process
Kodai Yamada, Jun Furuta, Kazutoshi Kobayashi (KIT) |
[more] |
|
| IST, IEICE-ICD, IEICE-SDM |
2018-08-07
12:55 |
Hokkaido |
Hokkaido University M Bldg. M151 |
[Invited Talk]
Development of SiGe-MEMS-on-CMOS technology for ultra-low-power inertial sensors
Hideyuki Tomizawa, Yoshihiko Kurui (Toshiba), Ippei Akita (AIST), Akira Fujimoto, Tomohiro Saito, Akihiro Kojima, Hideki Shibata (Toshiba) |
[more] |
|
| IST, IEICE-ICD, IEICE-SDM |
2018-08-07
13:40 |
Hokkaido |
Hokkaido University M Bldg. M151 |
[Invited Talk]
Fabrication and Characterization of SOI-CMOS Using Minimal-Fab and Mega-Fab Hybrid Process
Yongxun Liu (AIST) |
[more] |
|
| IST, IEICE-ICD, IEICE-SDM |
2018-08-07
14:25 |
Hokkaido |
Hokkaido University M Bldg. M151 |
Experiment of Ultralow Voltage Rectification by Super Steep SS "PN-Body Tied SOI-FET"
Shun Momose, Jiro Ida, Takuya Yamada, Takayuki Mori, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) |
[more] |
|
| IST, IEICE-ICD, IEICE-SDM |
2018-08-07
15:00 |
Hokkaido |
Hokkaido University M Bldg. M151 |
A 0.6V 9bit PWM Differential Arthmetic Circuit
Fumiya Kojima, Tomochika Harada (Yamagata Univ) |
[more] |
|
| IST, IEICE-ICD, IEICE-SDM |
2018-08-07
15:25 |
Hokkaido |
Hokkaido University M Bldg. M151 |
A 65nm SOTB Based-On Code-Modulated Synchronized-OOK Transmitter for Normally-Off Wireless Sensor Networks
Van-Trung Nguyen, Ryo Ishikawa, Koichiro Ishibashi (The UEC) |
In this paper, Code-Modulated Synchronized-OOK (CMS-OOK) modulation scheme is proposed. Based on 65nm SOTB (Silicon-On T... [more] |
|
| IST, IEICE-ICD, IEICE-SDM |
2018-08-07
16:00 |
Hokkaido |
Hokkaido University M Bldg. M151 |
[Invited Talk]
A Battery Management System with a Low-Power State of Charge Monitoring Method and an Intermittently Enabled Coulomb Counter for IoT Devices
Ken-ichi Kawasaki, Jun-ichi Nagata, Hiroyuki Nakamoto (Fujitsu Labs.) |
[more] |
|
| IST, IEICE-ICD, IEICE-SDM |
2018-08-07
16:45 |
Hokkaido |
Hokkaido University M Bldg. M151 |
Power Consumption Estimation by Die Temperature for Processors Implemented on FPGA
Hiroaki Kaneko, Akinori Kanasugi (Tokyo Denki Univ.) |
[more] |
|
| IST, IEICE-ICD, IEICE-SDM |
2018-08-08
09:00 |
Hokkaido |
Hokkaido University M Bldg. M151 |
[Invited Talk]
Research trends of resistance change devices using oxide materials
-- Application to non-volatile memory and neuromorphic device --
Hisashi Shima, Makoto Takahashi, Yasuhisa Naitoh, Hiroyuki Akinaga (AIST) |
[more] |
|
| IST, IEICE-ICD, IEICE-SDM |
2018-08-08
09:45 |
Hokkaido |
Hokkaido University M Bldg. M151 |
Understanding Temperature Effect on Subthreshold Slope Variability in Bulk and SOTB MOSFETs
Shuang Gao, Tomoko Mizutani, Kiyoshi Takeuchi, Masaharu Kobayashi, Toshiro Hiramoto (Univ. Tokyo) |
[more] |
|
| IST, IEICE-ICD, IEICE-SDM |
2018-08-08
10:20 |
Hokkaido |
Hokkaido University M Bldg. M151 |
[Invited Talk]
Neuromorphic Operation using an Atom/Ion Movement-Type Device
Takeo Ohno (Oita Univ.) |
[more] |
|
| IST, IEICE-ICD, IEICE-SDM |
2018-08-08
11:05 |
Hokkaido |
Hokkaido University M Bldg. M151 |
[Invited Talk]
Extremely low power device using crystalline oxide semiconductor
Kiyoshi Kato (SEL) |
[more] |
IST2018-46
pp.73-76 |
| IST, IEICE-ICD, IEICE-SDM |
2018-08-08
12:50 |
Hokkaido |
Hokkaido University M Bldg. M151 |
Measurements and Analysis of Power Supply Noise in Digital IC Chip
Kosuke Jike, Akihiro Tsukioka, Ryohei Sawada, Koh Watanabe, Noriyuki Miura, Makoto Nagata (Kobe Univ) |
[more] |
|
| IST, IEICE-ICD, IEICE-SDM |
2018-08-08
13:15 |
Hokkaido |
Hokkaido University M Bldg. M151 |
Highly Symmetrical 10T 2-Read/Write Dual-port SRAM Bitcell Design In 28nm High-k/Metal-gate Planar Bulk CMOS Technology
Yuichiro Ishii, Miki Tanaka, Makoto Yabuuchi, Yohei Sawada, Shinji Tanaka, Koji Nii (Renesas), Tien Yu Lu, Chun Hsien Huang, Shou Sian Chen, Yu Tse Kuo, Ching Cheng Lung, Osbert Cheng (UMC) |
[more] |
|
| IST, IEICE-ICD, IEICE-SDM |
2018-08-08
13:40 |
Hokkaido |
Hokkaido University M Bldg. M151 |
[Invited Talk]
CMOS Annealing Machine for Combinatorial Optimization Problems
Masanao Yamaoka (Hitachi) |
[more] |
|
| IST, IEICE-ICD, IEICE-SDM |
2018-08-08
14:35 |
Hokkaido |
Hokkaido University M Bldg. M151 |
Proposal of reconfigurable system LSI with BiCS technology
Shigeyoshi Watanabe (Shonan Insti. of Tech.) |
[more] |
|