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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
Hokkaido Hokkaido University M Bldg. M151 Device and Process Design for HfO2-Based Ferroelectric Tunnel Junction Memory with Large Tunneling Electroresistance Effect and Multi-level Cell
Masaharu Kobayashi, Yusaku Tagawa, Mo Fei, Toshiro Hiramoto (Univ. Tokyo)
IEICE-SDM, IEICE-ICD, IST [detail] 2017-08-01
Hokkaido Hokkaido-Univ. Multimedia Education Bldg. [Invited Talk] A Nonvolatile SRAM Integrated with Ferroelectric HfO2 Capacitor for Normally-Off Operation
Masaharu Kobayashi (Univ. of Tokyo), Nozomu Ueyama, Toshiro Hiramoto (IIS, Univ. of Tokyo)
IDY, IEICE-EID, IEE-EDD 2013-01-24
Shizuoka Shizuoka Univ. Characterization of InGaN Quantum Well by Two-Wavelength Excited Photoluminescence
Naoki Murakoshi, A. Z. M. Touhidul Islam, Takeshi Fukuda, Norihiko Kamata (Saitama Univ.), Yasuhiko Arakawa (Univ. Tokyo)
 Results 1 - 3 of 3  /   
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