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Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
IST, IEICE-ICD, IEICE-SDM |
2018-08-09 14:10 |
Hokkaido |
Hokkaido University M Bldg. M151 |
Device and Process Design for HfO2-Based Ferroelectric Tunnel Junction Memory with Large Tunneling Electroresistance Effect and Multi-level Cell Masaharu Kobayashi, Yusaku Tagawa, Mo Fei, Toshiro Hiramoto (Univ. Tokyo) |
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IEICE-SDM, IEICE-ICD, IST [detail] |
2017-08-01 09:00 |
Hokkaido |
Hokkaido-Univ. Multimedia Education Bldg. |
[Invited Talk]
A Nonvolatile SRAM Integrated with Ferroelectric HfO2 Capacitor for Normally-Off Operation Masaharu Kobayashi (Univ. of Tokyo), Nozomu Ueyama, Toshiro Hiramoto (IIS, Univ. of Tokyo) |
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IDY, IEICE-EID, IEE-EDD |
2013-01-24 15:16 |
Shizuoka |
Shizuoka Univ. |
Characterization of InGaN Quantum Well by Two-Wavelength Excited Photoluminescence Naoki Murakoshi, A. Z. M. Touhidul Islam, Takeshi Fukuda, Norihiko Kamata (Saitama Univ.), Yasuhiko Arakawa (Univ. Tokyo) |
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