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All Technical Committee Conferences  (Searched in: All Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 8 of 8  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
IEICE-EID, IEICE-SDM, IDY [detail] 2020-12-02
14:30
Kyoto   [Special Invited Talk] Defects control in oxide semiconductors at low-temperature and its application to flexible devices
Yusaku Magari, Mamoru Furuta (Kochi Univ. of Technol.)
 [more]
IDY, IEICE-EID, IEIJ-SSL, SID-JC, IEE-EDD [detail] 2020-01-24
11:10
Tottori Tottori Univ [Poster Presentation] Physical properties of anodized aluminum oxide for low temperature processed IGZO thin-film transistors.
Kono Shuya, Mori Marin, Koretomo Daichi, Furuta Mamoru (KUT)
(To be available after the conference date) [more]
IEICE-EID, IEICE-SDM, IDY [detail] 2018-12-25
11:45
Kyoto   Device Using Thin Film of GTO by MistCVD Method
Yuta Takishita, Sumio Sugisaki (Ryukoku Univ.), Daichi Koretomo, Yusaku Magari, Mamoru Furuta (KUT), Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)
We made devices using Ga-Sn-O(GTO) thin films deposited by mist CVD method. A thin film transistor incorporating GTO pre... [more] IDY2018-57
pp.13-16
IEICE-EID, IEICE-SDM, IDY [detail] 2018-12-25
14:30
Kyoto   Dependence of thermoelectric properties and structure of Ga-Sn-O thin films on annealing
Yoku Ikeguchi, Tatsuya Aramaki (Ryukoku Univ.), Kenta Umeda, Mutsunori Uenuma (NAIST), Daichi Koretomo, Yusaku Magari, Mamoru Furuta (KUT), Mutsumi Kimura (Ryukoku Univ.)
Ga-Sn-O(GTO) thin films were formed using RF magnetron sputtering, and the influence of deposition pressure and crystal ... [more] IDY2018-59
pp.33-36
IEICE-EID, IDY, IEE-EDD, SID-JC, IEIJ-SSL [detail] 2016-01-28
15:04
Toyama Toyama Univ. Plasma treatment for source/drain regions of self-aligned InGaZnO thin-film. -- Effects of substrate bias during the plasma treatment of IGZO. --
Yusaku Magari, Tatsuya Toda, Hisao Makino, Mamoru Furuta (Kochi Univ. of Technol.)
 [more]
IDY, IEICE-EID, IEE-EDD 2013-01-25
10:10
Shizuoka Shizuoka Univ. Fabrication and properties of Oxide TFT with an IGZO/AlOx stack prepared by non-vacuum process "mist CVD"
Toshiyuki Kawaharamura, Takayuki Uchida, Dapeng Wang, Masaru Sanada, Mamoru Furuta (KUT)
Last year, oxide TFT consisting of channel layer (IGZO) (47 nm) and gate insulator (AlOx) (116 nm) was fabricated by mis... [more] IDY2013-8
pp.73-76
IDY, IEICE-EID 2010-11-26
15:30
Tokyo Kikai-Shinko-Kaikan Bldg. Debriefing Session of IMID conference -- TFT technology --
Mamoru Furuta (Kochi Univ. of Tech.)
Topics of thin-film transistors (TFTs) related articles in international conference on information display (IMID) 2010 w... [more] IDY2010-82
pp.17-19
IST 2008-12-16
14:00
Tokyo Univ. of Tokyo Stacked Organic Image Sensor with Zinc-oxide TFTs as Signal Readout Circuit
Hokuto Seo, Satoshi Aihara, Masakazu Nanba, Toshihisa Watabe, Hiroshi Ohtake, Misao Kubota, Norifumi Egami (NHK), Takahiro Hiramatsu, Tokiyoshi Matsuda, Mamoru Furuta, Takashi Hirao (Kochi Uni. of Technol)
We have studied a single-chip image sensor with stacked structure consisting of transparent readout circuits and organic... [more]
 Results 1 - 8 of 8  /   
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