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Committee Date Time Place Paper Title / Authors Abstract Paper #
IEICE-EID, IEICE-SDM, IDY [detail] 2018-12-25
11:45
Kyoto   Device Using Thin Film of GTO by MistCVD Method
Yuta Takishita, Sumio Sugisaki (Ryukoku Univ.), Daichi Koretomo, Yusaku Magari, Mamoru Furuta (KUT), Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)
We made devices using Ga-Sn-O(GTO) thin films deposited by mist CVD method. A thin film transistor incorporating GTO pre... [more] IDY2018-57
pp.13-16
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