Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
IEICE-ICD, IEICE-SDM, IST [detail] |
2024-08-06 11:00 |
Hokkaido |
(Hokkaido, Online) (Primary: On-site, Secondary: Online) |
Understanding Abnormal Vth Increase Induced by Hot Carrier Injection at Cryogenic Temperatures Shunsuke Shitakata (Keio Univ./AIST), Hiroshi Oka, Kimihiko Kato, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Takahiro Mori (AIST) |
In this study, we attempted to understand the mechanisms of hot carrier degradation in cryogenic MOSFET operation. Hot c... [more] |
|
IEICE-ICD, IEICE-SDM, IST [detail] |
2023-08-01 15:25 |
Hokkaido |
(Hokkaido, Online) (Primary: On-site, Secondary: Online) |
[Invited Talk]
Low-Frequency Noise Source in Cryogenic Operation of Short-Channel Bulk MOSFETs Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori (AIST) |
[more] |
|
IEICE-ICD, IEICE-SDM, IST [detail] |
2023-08-01 16:10 |
Hokkaido |
(Hokkaido, Online) (Primary: On-site, Secondary: Online) |
Additional High-Pressure Hydrogen Annealing Improving the Cryogenic Operation of Si (110)-oriented n-MOSFETs Shunsuke Shitakata (Keio Univ./AIST), Hiroshi Oka, Takumi Inaba, Shota Iizuka, Kimihiko Kato, Takahiro Mori (AIST) |
[more] |
|
IEICE-ICD, IEICE-SDM, IST [detail] |
2023-08-01 16:35 |
Hokkaido |
(Hokkaido, Online) (Primary: On-site, Secondary: Online) |
Analysis of back bias effects and history phenomena in cryo 200nm SOIMOSFETs Ryusei Ri, Takayuki Mori (KIT), Hiroshi Oka, Takahiro Mori (AIST), Jiro Ida (KIT) |
[more] |
|
IEICE-ICD, IEICE-SDM, IST [detail] |
2022-08-09 11:05 |
Online |
On-line (Online, Online) |
[Invited Talk]
Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic MOSFET Operation Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori (AIST) |
[more] |
|
IEICE-ICD, IEICE-SDM, IST [detail] |
2022-08-09 11:50 |
Online |
On-line (Online, Online) |
TCAD Analysis for threshold voltage increase in cryogenic MOSFET operation Hidehiro Asai, Takumi Inaba, Junichi Hattori, Koichi Fukuda, Hiroshi Oka, Takahiro Mori (AIST) |
[more] |
|
IEICE-SDM, IEICE-ICD, IST [detail] |
2021-08-17 10:15 |
Online |
Online (Online) |
[Invited Talk]
Buried nanomagnet realizing high-speed/low-variability silicon spin qubits: implementable in error-correctable large-scale quantum computers Shota Iizuka, Kimihiko Kato, Atsushi Yagishita, Hidehiro Asai, Tetsuya Ueda, Hiroshi Oka, Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Takahiro Mori (AIST) |
[more] |
|
IEICE-ICD, IEICE-SDM, IST [detail] |
2020-08-07 09:30 |
Online |
Online (Online) |
[Invited Talk]
Understanding the Origin of Low-frequency Noise in Cryo-CMOS Toward Long-coherence-time Si Spin Qubit Hiroshi Oka, Takashi Matsukawa, Kimihiko Kato, Shota Iizuka, Wataru Mizubayashi, Kazuhiko Endo, Tetsuji Yasuda, Takahiro Mori (AIST) |
[more] |
|
IEICE-SDM, IEICE-ICD, IST [detail] |
2017-07-31 12:00 |
Hokkaido |
Hokkaido-Univ. Multimedia Education Bldg. (Hokkaido) |
TCAD Simulation of C-TFET Circuit with Drain Offset Structure Hidehiro Asai, Takahiro Mori, Junich Hattori, Takashi Matsukawa, Koichi Fukuda (AIST) |
[more] |
|
IEICE-ICD, IEICE-SDM, IST [detail] |
2016-08-03 09:00 |
Osaka |
Central Electric Club (Osaka) |
[Invited Talk]
SRAM PUF using Polycrystalline Silicon Channel FinFET and Its Evaluation Shin-ichi O'uchi, Yungxun Liu, Yohei Hori, Toshifumi Irisawa, Hiroshi Fuketa, Yukinori Morita, Shinji Migita, Takahiro Mori, Tadashi Nakagawa, Junichi Tsukada, Hanpei Koike, Meishoku Masahara, Takashi Matsukawa (AIST) |
[more] |
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