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All Technical Committee Conferences (Searched in: All Years)
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| Search Results: Conference Papers |
| Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| IEICE-ICD, IEICE-SDM, IST [detail] |
2023-08-01
13:00 |
Hokkaido |
(Primary: On-site, Secondary: Online) |
[Invited Talk]
R and D of Low Power Semiconductor Technology and It's Application Expansio
-- Review R and D of Semiconductor device and LSI for these 43 years --
Koichiro Ishibashi (UEC) |
[more] |
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| IEICE-ICD, IEICE-SDM, IST [detail] |
2022-08-08
14:00 |
Online |
On-line |
Evaluation of Steep Subthreshold Slope Device "Dual-gate PN-body Tied SOI-FET" for Ultra-low Voltage Operation
Haruki Yonezaki, Jiro Ida, Takayuki Mori (KIT), Koichiro Ishibashi (UEC) |
[more] |
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| IEICE-ICD, IEICE-SDM, IST [detail] |
2020-08-07
11:00 |
Online |
Online |
CMOS Inverter Transfer Characteristics on Steep SS “PN-Body Tied SOI-FET”
Shota Ishiguro, Jiro Ida, Takayuki Mori (KIT), Koichiro Ishibashi (UEC) |
[more] |
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| IEICE-SDM, IEICE-ICD, IST [detail] |
2019-08-09
14:10 |
Hokkaido |
Hokkaido Univ., Graduate School /Faculty of Information Science and |
Effect of Vsub and Positive Charge in Buried Oxide on Super Steep SS “PN Body-Tied SOI-FET”
Wataru Yabuki, Jiro Ida, Takayuki Mori (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) |
[more] |
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| IST, IEICE-ICD, IEICE-SDM |
2018-08-07
10:45 |
Hokkaido |
Hokkaido University M Bldg. M151 |
[Invited Talk]
Energy Harvesting Beat Sensors and Potential Applications
-- Low Power, Low cost and High precision IoT Sensors --
Koichiro Ishibashi (UEC) |
[more] |
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| IST, IEICE-ICD, IEICE-SDM |
2018-08-07
14:25 |
Hokkaido |
Hokkaido University M Bldg. M151 |
Experiment of Ultralow Voltage Rectification by Super Steep SS "PN-Body Tied SOI-FET"
Shun Momose, Jiro Ida, Takuya Yamada, Takayuki Mori, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) |
[more] |
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| IEICE-SDM, IEICE-ICD, IST [detail] |
2017-08-02
11:35 |
Hokkaido |
Hokkaido-Univ. Multimedia Education Bldg. |
Gate Controlled Diode Characteristics of Super Steep Subthreshold Slope PN-Body Tied SOI-FET for High Efficiency RF Energy Harvesting
Shun Momose, Jiro Ida, Takayuki Mori, Takahiro Yoshida, Junpei Iwata, Takashi Horii, Takahiro Furuta, Takuya Yamada, Daichi Takamatsu, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) |
[more] |
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| IST, IEICE-ICD |
2011-07-22
09:50 |
Hiroshima |
Hiroshima Institute of Technology |
On-Chip Resonant Supply Noise Reduction Using Active Decoupling Capacitors
Jinmyoung Kim (Tokyo Univ.), Toru Nakura (VDEC), Hidehiro Takata, Koichiro Ishibashi (Renesas Electronics), Makoto Ikeda, Kunihiro Asada (VDEC) |
[more] |
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