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Committee Date Time Place Paper Title / Authors Abstract Paper #
IEICE-SDM, IEICE-ICD, IST [detail] 2025-08-06
10:30		 Hokkaido Hokkaido Univ. Prmaceutical of Science
(Primary: On-site, Secondary: Online)		 [Invited Talk] Atomic layer deposited Ga-doped In2O3 nanosheet with intrinsic mobility over 120 cm2/Vs
Takanori Takahashi (NAIST), Takuya Hoshii (Science Tokyo), Yuki Tsuruma, Misa Sunagawa, Shigekazu Tomai (Idemitsu Kosan), Jongho Park, Hiroki Tamamoto, Kuniyuki Kakushima (Science Tokyo), Yukiharu Uraoka (NAIST) 		 [more]
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