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Committee Date Time Place Paper Title / Authors Abstract Paper #
IEICE-ICD, IEICE-SDM, IST [detail] 2016-08-03
15:05
Osaka Central Electric Club Increased Drain-Induced Variability and Within-Device Variability in Extremely Narrow Silicon Nanowire MOSFETs with Width down to 2nm
Tomoko Mizutani, Kiyoshi Takeuchi, Ryota Suzuki, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo)
The effects of drain voltage in threshold voltage variability in extremely narrow silicon nanowire (NW) channel FETs are... [more]
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