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| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| IST |
2019-03-22
11:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Back-Illuminated 2.74 μm-Pixel-Pitch Global Shutter CMOS Image Sensor with Charge-Domain Memory Achieving a 10k e- Saturation Signal
Yoshimichi Kumagai, Ryoto Yoshita, Naoyuki Osawa, Harumi Ikeda, Kazuyoshi Yamashita, Takashi Abe, Shigetaka Kudoh (SSS), Junji Yamane, Tooru Idekoba, Shinichiro Nohdo, Yuma Ono, Sachihito Kunitake, Mitsuru Sato, Naoyuki Sato, Takayuki Enomoto (SCK), Keiichi Nakazawa, Hiroyuki Mori, Yasushi Tateshita, Keiichi Ohno (SSS) |
[more] |
IST2019-16
pp.21-25 |
| IST |
2014-03-14
12:00 |
Tokyo |
NHK |
Three-dimensional Structures for High Saturation Signals and Crosstalk Suppression in 1.20 um Pixel Back-Illuminated CMOS Image Sensor
Takekazu Shinohara, Kazufumi Watanabe (Sony Semiconductor), Takashi Abe, Kazunobu Ohta (Sony), Hajime Nakayama (Sony Semiconductor), Takafumi Morikawa, Keiichi Ohno (Sony), Dai Sugimoto (Sony Semiconductor), Shingo Kadomura, Teruo Hirayama (Sony) |
We propose two technologies, vertical transfer gate (VTG) and buried shielding metal (BSM), that can be applied to 1.20 ... [more] |
IST2014-10
pp.7-10 |
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