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Committee Date Time Place Paper Title / Authors Abstract Paper #
IEICE-ICD, IEICE-SDM, IST [detail] 2020-08-06
10:15
Online Online [Invited Talk] Polarization/charge coupling in Si ferroelectric FET and its impact on memory characteristics
Kasidit Toprasertpong, Zaoyang Lin, Tsung-En Lee, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo)
Ferroelectric FETs, where the ferroelectric material is employed as the MOSFET gate insulator, are different from conven... [more]
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