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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 5 of 5  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
BCT, KYUSHU, IEEE-BT, IEEE-AP-S-FUKUOKA 2021-01-22
11:30
Fukuoka Online Evaluation of deep level by small signal equivalent circuit analysis of GaN HEMT
Takumi Nishimura, Masaya Tabuchi (Saga Univ.), Yutaro Yamaguchi, Tomohiro Otsuka, Shintaro Shinjo, Yutaro Yamanaka (Mitsubishi Electric), Toshiyuki Oishi (Saga Univ.)
Although GaN HEMTs have been put to practical use as microwave high-power amplifiers, it is necessary to elucidate the e... [more] BCT2021-2
pp.5-8
IDY 2018-03-08
15:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Photo-Induced Transient Spectroscopy Study on Hydrogen-Related Trap States in a-IGZO-TFTs induced during TFT Fabrication Process
Kazushi Hayashi, Mototaka Ochi, Aya Hino, Hiroshi Goto, Toshihiro Kugimiya (Kobe Steel)
Hydrogen-related trap states induced during a-IGZO TFT fabrication process were examined. The a-IGZO TFTs with various E... [more] IDY2018-19
pp.21-26
IST 2016-03-11
15:55
Tokyo NHK Research Lab (Setagaya) Device Simulations for Ultrahigh-Speed and High-Voltage Image Sensors
Hideki Mutoh (Link Research)
Physical models and algorithms for use in device simulations of ultrahigh-speed and high-voltage image sensors are repor... [more] IST2016-18
pp.45-48
IST, IEICE-ICD 2014-07-03
13:55
Shimane   [Invited Talk] Characterization of Individual Oxide Traps Contributing to Multi-Trap Random Telegraph Noise in Nano-Scaled MOSFETs
Toshiaki Tsuchiya (Shimane Univ.)
We propose a novel method for characterizing the oxide traps that participate in random telegraph noise (RTN) by using c... [more] IST2014-32
pp.29-30
IST, IEICE-ICD 2011-07-22
16:10
Hiroshima Hiroshima Institute of Technology An 0.5V Transceiver in 65nm CMOS for High-Speed Wireless Proximity Interface
Takeshi Matsubara (Keio Univ.), Isamu Hayashi (STARC), Abul Hasan Johari, Satoshi Kumaki, Kaoru Kohira, Tadahiro kuroda, Hiroki Ishikuro (Keio Univ.)
This paper presents a pulse-based inductive-coupling transceiver in 65nm CMOS for High-speed wireless proximity communic... [more]
 Results 1 - 5 of 5  /   
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