| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| IDY, IEICE-EID, SID-JC [detail] |
2021-07-30
15:20 |
Online |
Online |
[Invited Lecture]
An Imager with Organic Photodetectors Based on LTPS-TFT Technology
Ayato Kitamura, Takashi Nakamura, Hirofumi Kato, Hiroyuki Kimura, Akio Takimoto (JDI), Tomoyuki Yokota, Takao Someya (UTokyo) |
We have developed a high-resolution 508 ppi imager using low-temperature polysilicon thin-film transistors (LTPS-TFTs) o... [more] |
IDY2021-21
pp.21-24 |
| IDY, IEICE-EID, IEIJ-SSL, SID-JC, IEE-EDD [detail] |
2020-01-23
15:15 |
Tottori |
Tottori Univ |
[Invited Lecture]
Surface Treatment using Atomic Hydrogen for Semiconductor Process
Akira Heya (Univ. of Hyogo) |
To realize flexible displays and sheet computers, we have tried to develop the novel surface treatment, named Atomic Hyd... [more] |
IDY2020-13
pp.67-72 |
| IDY, IEICE-EID, IEIJ-SSL, SID-JC, IEE-EDD [detail] |
2020-01-24
11:10 |
Tottori |
Tottori Univ |
[Poster Presentation]
Physical properties of anodized aluminum oxide for low temperature processed IGZO thin-film transistors.
Kono Shuya, Mori Marin, Koretomo Daichi, Furuta Mamoru (KUT) |
(To be available after the conference date) [more] |
|
| IEICE-SDM, IEICE-EID, IDY [detail] |
2019-12-24
14:05 |
Nara |
NAIST |
Ga-Sn-O TFT fabricated on Al2O3 insulating film
Kazuki Hattori, Kenta Tanino, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ), Toshiyuki Kawaharamura, Li Liu (Kochi Univ of Tech) |
We compared the characteristics of Ga-Sn-O Thin Film Transistors (GTO TFTs) with and without an Al2O3 film by mist Chemi... [more] |
IDY2019-70
pp.9-12 |
| IEICE-EID, IEICE-SDM, IDY [detail] |
2018-12-25
11:45 |
Kyoto |
|
Device Using Thin Film of GTO by MistCVD Method
Yuta Takishita, Sumio Sugisaki (Ryukoku Univ.), Daichi Koretomo, Yusaku Magari, Mamoru Furuta (KUT), Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) |
We made devices using Ga-Sn-O(GTO) thin films deposited by mist CVD method. A thin film transistor incorporating GTO pre... [more] |
IDY2018-57
pp.13-16 |
| IDY, IEICE-EID, IEE-EDD |
2013-01-25
10:02 |
Shizuoka |
Shizuoka Univ. |
Development of Simulation Model for Oxide Semiconductor Thin-Film Transistors
Hiroshi Tsuji, Mitsuru Nakata, Hiroto Sato, Yoshiki Nakajima, Yoshihide Fujisaki, Tatsuya Takei, Toshihiro Yamamoto, Hideo Fujikake (NHK) |
A new simulation model for current-voltage characteristics of oxide semiconductor thin-film transistors (a-IGZO TFTs) is... [more] |
IDY2013-7
pp.69-72 |
| IDY, IEICE-EID, IEE-EDD |
2013-01-25
10:10 |
Shizuoka |
Shizuoka Univ. |
Fabrication and properties of Oxide TFT with an IGZO/AlOx stack prepared by non-vacuum process "mist CVD"
Toshiyuki Kawaharamura, Takayuki Uchida, Dapeng Wang, Masaru Sanada, Mamoru Furuta (KUT) |
Last year, oxide TFT consisting of channel layer (IGZO) (47 nm) and gate insulator (AlOx) (116 nm) was fabricated by mis... [more] |
IDY2013-8
pp.73-76 |
| IDY, IEICE-EID |
2012-11-07
15:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Report on IMID 2012
-- Thin-Film Transistor technologies --
Aya Hino, Kazushi Hayashi (Kobelco) |
We review the papers that were presented in the session of TFT-related technologies at IMID 2012. [more] |
IDY2012-63
pp.13-16 |
| IDY, IEICE-EID |
2010-11-26
15:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Debriefing Session of IMID conference
-- TFT technology --
Mamoru Furuta (Kochi Univ. of Tech.) |
Topics of thin-film transistors (TFTs) related articles in international conference on information display (IMID) 2010 w... [more] |
IDY2010-82
pp.17-19 |