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| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| IST |
2023-06-21
13:10 |
Tokyo |
Tokyo University of Science Morito Memorial Hall |
[Poster Presentation]
Analysis of Light Intensity and Charge Holding Time Dependence of Full Well Capacity in CMOS Image Sensor with A Buried Overflow Transfer Gate
Ken Miyauchi (Brillnics/Tohoku Univ.), Toshiyuki Isozaki, Rimon Ikeno, Junichi Nakamura (Brillnics) |
In this paper, an analytical model of CMOS image sensor full well capacity with a buried overflow transfer gate is propo... [more] |
IST2023-19
pp.1-4 |
| IST |
2019-09-20
11:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
A new 0.8um CMOS image sensor with low RTS noise and high full well capacity
Takuma Hasegawa (OVT Japan), Kazufumi Watanabe, Y. Jay Jung (OVT), Nagataka Tanaka, Takashi Nakashikiryo (OVT Japan), Wu-Zang Yang (OVT Taiwan), Alan Chih-Wei Hsiung, Zhiqiang Lin, Sohei Manabe, Vincent C. Venezia, Lindsay A. Grant (OVT) |
This is a report of a new 0.8µm, 32 mega pixel CMOS image sensor (CIS) with OmniVision second-generation (Gen2) stacking... [more] |
IST2019-46
pp.13-16 |
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