| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| IDY, IEICE-EID, SID-JC [detail] |
2022-07-29
16:10 |
Online |
Online |
[Invited Talk]
Advanced Hybrid Process with Back Contact IGZO-TFT
Masatomo Honjo, Yujiro Takeda, Mehadi Aman, Kazuatsu Ito, Kohei Tanaka, Hiroshi Matsukizono, Wataru Nakamura (SDTC) |
We propose the new structure of hybrid backplane technology with IGZO-TFT and LTPS. In this structure, IGZO is directly ... [more] |
IDY2022-29
pp.35-37 |
| IDY, IEICE-EID, IEIJ-SSL, SID-JC, IEE-EDD [detail] |
2020-01-24
11:10 |
Tottori |
Tottori Univ |
[Poster Presentation]
Physical properties of anodized aluminum oxide for low temperature processed IGZO thin-film transistors.
Kono Shuya, Mori Marin, Koretomo Daichi, Furuta Mamoru (KUT) |
(To be available after the conference date) [more] |
|
| IEICE-EID, IEICE-SDM, IDY [detail] |
2018-12-25
15:30 |
Kyoto |
|
IGZO thin film synapse for brain type integrated system
Yuki Shibayama, Daiki Yamakawa, Keisuke Ikushima, Sumio Sugisaki, Mutsumi Kimura (Ryukoku Univ.), Yasuhiko Nakashima (Nara Institute of Science and Technology) |
We are researching and developing neural networks using thin film devices.In this study, we fabricated In-Ga-Zn-O (IGZO)... [more] |
IDY2018-63
pp.49-52 |
| IDY |
2018-03-08
15:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
Photo-Induced Transient Spectroscopy Study on Hydrogen-Related Trap States in a-IGZO-TFTs induced during TFT Fabrication Process
Kazushi Hayashi, Mototaka Ochi, Aya Hino, Hiroshi Goto, Toshihiro Kugimiya (Kobe Steel) |
Hydrogen-related trap states induced during a-IGZO TFT fabrication process were examined. The a-IGZO TFTs with various E... [more] |
IDY2018-19
pp.21-26 |
| IDY |
2018-03-08
16:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
Simulation Study of Novel Thin-Film Devices Using Depletion State of Amorphous Oxide Semiconductor
Katsumi Abe, Masato Fujinaga, Takeshi Kuwagaki (Silvaco Japan) |
Novel thin-film devices using amorphous oxide semiconductor (AOS) were studied via device simulation. The simulation of ... [more] |
IDY2018-22
pp.37-41 |
| IDY, IEICE-EID, SID-JC [detail] |
2016-08-02
15:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
Development of a 27-in. 8K x 4K Liquid-Crystal Display Using an InGaZnO TFT Backplane
Shigeyuki Yamada, Fumikazu Shimoshikiryoh, Yasuhisa Itoh, Atsushi Ban (Sharp Corp.) |
We have successfully developed 27inch 8K4K Liquid Crystal display by utilizing BCE IGZO (Back Channel Etched InGaZnO) tr... [more] |
IDY2016-36
pp.27-30 |
| IST, IEICE-ICD |
2015-07-03
09:30 |
Kanagawa |
National Defense Academy |
[Invited Talk]
Oxide Semiconductor and its Application to Image Sensors
Shuhei Maeda, Takuro Ohmaru, Takashi Nakagawa, Yuki Okamoto, Munehiro Kozuma, Seiichi Yoneda, Hiroki Inoue, Yoshiyuki Kurokawa, Takayuki Ikeda, Yoshinori Ieda, Naoto Yamade, Hidekazu Miyairi (SEL), Makoto Ikeda (Univ. of Tokyo), Yoshitaka Yamamoto, Shunpei Yamazaki (SEL) |
An FET containing crystalline In-Ga-Zn-O (IGZO) with a novel crystal structure called a c-axis-aligned a-b-plane-anchore... [more] |
IST2015-41
pp.21-26 |
| IST |
2015-03-27
10:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
25.3uW at 60fps 240x160 Pixel Vision Sensor for Motion Capturing with In-Pixel Non-volatility Analog Memory Using Crystalline Oxide Semiconductor FET
Takuro Ohmaru, Takashi Nakagawa, Shuhei Maeda, Yuki Okamoto, Munehiro Kozuma, Seiichi Yoneda, Hiroki Inoue, Yoshiyuki Kurokawa, Takayuki Ikeda, Yoshinori Ieda, Naoto Yamade, Hidekazu Miyairi (SEL), Makoto Ikeda (Tokyo Univ.), Yoshitaka Yamamoto, Shunpei Yamazaki (SEL) |
We have fabricated a vision sensor with in-pixel non-volatility analog memory using a c-axis aligned crystalline oxide s... [more] |
IST2015-13
pp.13-16 |
| IDY |
2014-03-07
14:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Crystalline Oxide Semiconductor and Its Application to Information Display
Jun Koyama, Koji Dairiki (SEL), Kenichi Okazaki, Junichi Koezuka (AFD Inc), Hiroyuki Miyake, Daisuke Matsubayashi, Yoshitaka Yamamoto, Shunpei Yamazaki (SEL) |
This study shows the physical properties of a crystalline oxide semiconductor and its information display application. [more] |
IDY2014-20
pp.9-14 |
| IDY, IEICE-EID |
2013-07-17
10:45 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Report on SID2013
-- OLED Displays and Lightings --
Toshiyuki Isa (SEL) |
This paper reports OLED Display and Lighting technology shown in SID2013. [more] |
|
| IDY, IEICE-EID, IEE-EDD |
2013-01-25
10:10 |
Shizuoka |
Shizuoka Univ. |
Fabrication and properties of Oxide TFT with an IGZO/AlOx stack prepared by non-vacuum process "mist CVD"
Toshiyuki Kawaharamura, Takayuki Uchida, Dapeng Wang, Masaru Sanada, Mamoru Furuta (KUT) |
Last year, oxide TFT consisting of channel layer (IGZO) (47 nm) and gate insulator (AlOx) (116 nm) was fabricated by mis... [more] |
IDY2013-8
pp.73-76 |