| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| IDY, IEICE-EID, SID-JC [detail] |
2022-07-29
16:10 |
Online |
Online |
[Invited Talk]
Advanced Hybrid Process with Back Contact IGZO-TFT
Masatomo Honjo, Yujiro Takeda, Mehadi Aman, Kazuatsu Ito, Kohei Tanaka, Hiroshi Matsukizono, Wataru Nakamura (SDTC) |
We propose the new structure of hybrid backplane technology with IGZO-TFT and LTPS. In this structure, IGZO is directly ... [more] |
IDY2022-29
pp.35-37 |
| IDY, IEICE-EID, IEIJ-SSL, SID-JC, IEE-EDD [detail] |
2020-01-24
11:10 |
Tottori |
Tottori Univ |
[Poster Presentation]
Physical properties of anodized aluminum oxide for low temperature processed IGZO thin-film transistors.
Kono Shuya, Mori Marin, Koretomo Daichi, Furuta Mamoru (KUT) |
(To be available after the conference date) [more] |
|
| IDY |
2018-03-08
15:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
Photo-Induced Transient Spectroscopy Study on Hydrogen-Related Trap States in a-IGZO-TFTs induced during TFT Fabrication Process
Kazushi Hayashi, Mototaka Ochi, Aya Hino, Hiroshi Goto, Toshihiro Kugimiya (Kobe Steel) |
Hydrogen-related trap states induced during a-IGZO TFT fabrication process were examined. The a-IGZO TFTs with various E... [more] |
IDY2018-19
pp.21-26 |
| IDY |
2018-03-08
16:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
Simulation Study of Novel Thin-Film Devices Using Depletion State of Amorphous Oxide Semiconductor
Katsumi Abe, Masato Fujinaga, Takeshi Kuwagaki (Silvaco Japan) |
Novel thin-film devices using amorphous oxide semiconductor (AOS) were studied via device simulation. The simulation of ... [more] |
IDY2018-22
pp.37-41 |
| IDY, IEICE-EID, SID-JC [detail] |
2016-08-02
15:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
Development of a 27-in. 8K x 4K Liquid-Crystal Display Using an InGaZnO TFT Backplane
Shigeyuki Yamada, Fumikazu Shimoshikiryoh, Yasuhisa Itoh, Atsushi Ban (Sharp Corp.) |
We have successfully developed 27inch 8K4K Liquid Crystal display by utilizing BCE IGZO (Back Channel Etched InGaZnO) tr... [more] |
IDY2016-36
pp.27-30 |
| IDY, IEICE-EID |
2013-07-17
10:45 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Report on SID2013
-- OLED Displays and Lightings --
Toshiyuki Isa (SEL) |
This paper reports OLED Display and Lighting technology shown in SID2013. [more] |
|
| IDY, IEICE-EID, IEE-EDD |
2013-01-25
10:10 |
Shizuoka |
Shizuoka Univ. |
Fabrication and properties of Oxide TFT with an IGZO/AlOx stack prepared by non-vacuum process "mist CVD"
Toshiyuki Kawaharamura, Takayuki Uchida, Dapeng Wang, Masaru Sanada, Mamoru Furuta (KUT) |
Last year, oxide TFT consisting of channel layer (IGZO) (47 nm) and gate insulator (AlOx) (116 nm) was fabricated by mis... [more] |
IDY2013-8
pp.73-76 |