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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
BCT, KYUSHU, IEEE-BT, IEEE-AP-S-FUKUOKA |
2021-01-22 11:30 |
Fukuoka |
Online |
Evaluation of deep level by small signal equivalent circuit analysis of GaN HEMT Takumi Nishimura, Masaya Tabuchi (Saga Univ.), Yutaro Yamaguchi, Tomohiro Otsuka, Shintaro Shinjo, Yutaro Yamanaka (Mitsubishi Electric), Toshiyuki Oishi (Saga Univ.) |
Although GaN HEMTs have been put to practical use as microwave high-power amplifiers, it is necessary to elucidate the e... [more] |
BCT2021-2 pp.5-8 |
BCT, IEEE-BT |
2019-03-15 13:45 |
Nagasaki |
Izuharachiku-Kouminkan (Tsushima City) |
A Study on Channel Estimation Using Compressed Sensing-based Extrapolation for OFDM Systems Yukiko Shimbo, Hirofumi Suganuma (Waseda Univ.), Hiromichi Tomeba, Takashi Onodera, Hideo Namba (Sharp), Fumiaki Maehara (Waseda Univ.) |
(To be available after the conference date) [more] |
BCT2019-40 pp.17-20 |
IDY |
2018-03-08 15:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
Photo-Induced Transient Spectroscopy Study on Hydrogen-Related Trap States in a-IGZO-TFTs induced during TFT Fabrication Process Kazushi Hayashi, Mototaka Ochi, Aya Hino, Hiroshi Goto, Toshihiro Kugimiya (Kobe Steel) |
Hydrogen-related trap states induced during a-IGZO TFT fabrication process were examined. The a-IGZO TFTs with various E... [more] |
IDY2018-19 pp.21-26 |
IST, IEICE-ICD |
2014-07-03 13:55 |
Shimane |
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[Invited Talk]
Characterization of Individual Oxide Traps Contributing to Multi-Trap Random Telegraph Noise in Nano-Scaled MOSFETs Toshiaki Tsuchiya (Shimane Univ.) |
We propose a novel method for characterizing the oxide traps that participate in random telegraph noise (RTN) by using c... [more] |
IST2014-32 pp.29-30 |
IST, IEICE-ICD |
2011-07-22 16:10 |
Hiroshima |
Hiroshima Institute of Technology |
An 0.5V Transceiver in 65nm CMOS for High-Speed Wireless Proximity Interface Takeshi Matsubara (Keio Univ.), Isamu Hayashi (STARC), Abul Hasan Johari, Satoshi Kumaki, Kaoru Kohira, Tadahiro kuroda, Hiroki Ishikuro (Keio Univ.) |
This paper presents a pulse-based inductive-coupling transceiver in 65nm CMOS for High-speed wireless proximity communic... [more] |
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