| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| IEICE-ICD, IEICE-SDM, IST [detail] |
2024-08-06
11:00 |
Hokkaido |
(Primary: On-site, Secondary: Online) |
Understanding Abnormal Vth Increase Induced by Hot Carrier Injection at Cryogenic Temperatures
Shunsuke Shitakata (Keio Univ./AIST), Hiroshi Oka, Kimihiko Kato, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Takahiro Mori (AIST) |
In this study, we attempted to understand the mechanisms of hot carrier degradation in cryogenic MOSFET operation. Hot c... [more] |
|
| IEICE-ICD, IEICE-SDM, IST [detail] |
2023-08-01
15:25 |
Hokkaido |
(Primary: On-site, Secondary: Online) |
[Invited Talk]
Low-Frequency Noise Source in Cryogenic Operation of Short-Channel Bulk MOSFETs
Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori (AIST) |
[more] |
|
| IEICE-ICD, IEICE-SDM, IST [detail] |
2023-08-01
16:10 |
Hokkaido |
(Primary: On-site, Secondary: Online) |
Additional High-Pressure Hydrogen Annealing Improving the Cryogenic Operation of Si (110)-oriented n-MOSFETs
Shunsuke Shitakata (Keio Univ./AIST), Hiroshi Oka, Takumi Inaba, Shota Iizuka, Kimihiko Kato, Takahiro Mori (AIST) |
[more] |
|
| IEICE-ICD, IEICE-SDM, IST [detail] |
2023-08-01
16:35 |
Hokkaido |
(Primary: On-site, Secondary: Online) |
Analysis of back bias effects and history phenomena in cryo 200nm SOIMOSFETs
Ryusei Ri, Takayuki Mori (KIT), Hiroshi Oka, Takahiro Mori (AIST), Jiro Ida (KIT) |
[more] |
|
| IEICE-ICD, IEICE-SDM, IST [detail] |
2022-08-09
11:05 |
Online |
On-line |
[Invited Talk]
Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic MOSFET Operation
Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori (AIST) |
[more] |
|
| IEICE-ICD, IEICE-SDM, IST [detail] |
2022-08-09
11:50 |
Online |
On-line |
TCAD Analysis for threshold voltage increase in cryogenic MOSFET operation
Hidehiro Asai, Takumi Inaba, Junichi Hattori, Koichi Fukuda, Hiroshi Oka, Takahiro Mori (AIST) |
[more] |
|
| IEICE-SDM, IEICE-ICD, IST [detail] |
2021-08-17
10:15 |
Online |
Online |
[Invited Talk]
Buried nanomagnet realizing high-speed/low-variability silicon spin qubits: implementable in error-correctable large-scale quantum computers
Shota Iizuka, Kimihiko Kato, Atsushi Yagishita, Hidehiro Asai, Tetsuya Ueda, Hiroshi Oka, Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Takahiro Mori (AIST) |
[more] |
|
| IEICE-ICD, IEICE-SDM, IST [detail] |
2020-08-07
09:30 |
Online |
Online |
[Invited Talk]
Understanding the Origin of Low-frequency Noise in Cryo-CMOS Toward Long-coherence-time Si Spin Qubit
Hiroshi Oka, Takashi Matsukawa, Kimihiko Kato, Shota Iizuka, Wataru Mizubayashi, Kazuhiko Endo, Tetsuji Yasuda, Takahiro Mori (AIST) |
[more] |
|
| IST |
2018-03-09
15:10 |
Tokyo |
NHK Housou-Gijyutu Lab. |
Single-crystalline GeSn Photodiode Array on Quartz Substrate for Back-side Illuminated Near-infrared Image Sensor
Hiroshi Oka, Keitaro Inoue (Osaka Univ.), Thi Thuy Nguyen, Shin-Ichiro Kuroki (Hiroshima Univ.), Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) |
Imaging and sensing using near-infrared (NIR) light with a wavelength of 2-5 um have attracted a great interest due to i... [more] |
IST2018-22
pp.47-50 |
| IEICE-ITS, IEICE-IE, AIT, HI, ME [detail] |
2011-02-21
- 2011-02-22 |
Hokkaido |
Hokkaido University |
A note on improvement of classification performance based on SVDD including target object detection scheme
Hiroshi Okada, Takahiro Ogawa, Miki Haseyama (Hokkaido Univ.) |
This paper presents a new method for improving classification performance based on the SVDD including a target object de... [more] |
|
| ME, CE |
2009-08-03
14:30 |
Tokyo |
Tokyo Metropolitan Univ. Minami-Osawa Campus |
A Note on SVDD-Based Automatic Target Object Extraction for Image Retrieval
Hiroshi Okada, Takahiro Ogawa, Miki Haseyama (Hokkaido Univ.) |
This paper proposes an automatic extraction method of target objects from images based on the support vector data descri... [more] |
CE2009-40 ME2009-115
pp.13-16 |
|