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| Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| IST |
2026-03-27
10:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg.
(Primary: On-site, Secondary: Online) |
A Back-illuminated 10 μm-pitch SPAD Depth Sensor with 42.5% PDE at 940 nm using an Optimized Doping Design
Shohei Shimada, Yusuke Otake, Junki Suzuki, Aoi Magori, Kenji Kurata, Tomonori Matsui, Ryoya Tsuchida (Sony Semiconductor Solutions), Mutsumi Okazaki (Sony), Kaito Yokochi, Toshihito Iwase, Hiroaki Takase, Fumihiko Koga, Jun Ogi (Sony Semiconductor Solutions), Hidenori Maeda, Koji Moriyama, Hideyuki Honda (Sony Semiconductor Manufacturing), Kaoru Fujisawa, Takahiro Miura, Hiroaki Kouketsu, Toshifumi Wakano (Sony Semiconductor Solutions) |
[more] |
IST2026-16
pp.28-31 |
| IST |
2025-03-21
14:10 |
Tokyo |
Kikai-Shinko-Kaikan Bldg.
(Primary: On-site, Secondary: Online) |
A 2.1-ns Dead Time 5-μm Single Photon Avalanche Diode with 2-layer Transistor Pixel Technology
Shota Kitamura, Jun Ogi, Fumitaka Sugaya, Junki Suzuki, Aoi Magori, Tomonori Matsui, Kei Sumita, Yuki Ushiku (Sony Semiconductor Solutions), Koji Moriyama, Kenji Toshima (Sony Semiconductor Manufacturing), Tomohiro Namise, Hideki Ozawa, Yasunori Tsukuda, Yusuke Otake, Hiroki Hiyama, Shizunori Matsumoto, Atsushi Suzuki, Fumihiko Koga (Sony Semiconductor Solutions) |
This study reports a 5-$mu$m-pitch single photon avalanche diode (SPAD) with 2-layer transistor pixel technology. The de... [more] |
IST2025-16
pp.27-31 |
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