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Committee Date Time Place Paper Title / Authors Abstract Paper #
IST 2020-03-27
Tokyo Kikaishinko kaikan
A Single Exposure Linear Response Over 120dB Dynamic Range CMOS Image Sensor with Two-stage Lateral Overflow Integration Trench Capacitors
Yasuyuki Fujihara, Maasa Murata, Shota Nakayama, Rihito Kuroda, Shigetoshi Sugawa (Tohoku Unib.)
This paper presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integr... [more] IST2020-25
IST 2019-09-20
Tokyo Kikai-Shinko-Kaikan Bldg. Optical Performance of A 120 ke- Full Well Capacity and 160µV/e- Conversion Gain 2.8µm Back Side Illuminated Pixel with Lateral Overflow Integration Capacitor
Ken Miyauchi, Kazuya Mori, Isao Takayanagi, Junichi Nakamura (BRILLNICS), Shigetoshi Sugawa (Tohoku Univ.)
In this paper, we report about a prototype CMOS image sensor with a 2.8µm back side illuminated (BSI) pixel that employs... [more] IST2019-48
IST 2019-03-22
Tokyo Kikai-Shinko-Kaikan Bldg. A 24.3Me- Full Well Capacity and High Near Infrared Sensitivity CMOS Image Sensor with Lateral Overflow Integration Trench Capacitor
Maasa Murata, Rihito Kuroda, Yasuyuki Fujihara, Yusuke Otsuka (Tohoku Univ.), Hiroshi Shibata, Taku Shibaguchi, Yutaka Kamata, Noriyuki Miura, Naoya Kuriyama (LAPIS), Shigetoshi Sugawa (Tohoku Univ.)
This paper presents a 16$mu$m pixel pitch CMOS image sensor exhibiting 24.3Me- full well capacity and high near infrared... [more] IST2019-17
IST 2015-09-18
Tokyo Kikai-Shinko-Kaikan Bldg. Analysis and Reduction of Floating Diffusion Capacitance Components and Application to High Sensitivity and High Full Well Capacity CMOS Image Sensor
Fumiaki Kusuhara, Shunichi Wakashima, Satoshi Nasuno, Rihito Kuroda, Shigetoshi Sugawa (Tohoku Univ.)
This paper reports the analysis and reduction technology of components of floating diffusion (FD) capacitance (CFD) and ... [more] IST2015-56
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