Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
IEICE-EID, IDY, IEE-EDD, SID-JC, IEIJ-SSL [detail] |
2024-01-25 13:10 |
Kyoto |
(Primary: On-site, Secondary: Online) |
[Poster Presentation]
Resistance change behavior using negative resistance in ReRAM with three-layer GTO [Poster Presentation] Yoshiya Abe, Kenta Yachida, Kazuki Sawai, Mutsumi Kimura, Hidenori Kawanishi (Ryukoku Univ.), Tokiyoshi Matsuda (Kindai Univ.) |
ReRAMs have attracted much attention due to their high integration, stability, high-speed operation, and low cost. There... [more] |
|
IEICE-EID, IEICE-SDM, IDY [detail] |
2018-12-25 11:45 |
Kyoto |
|
Device Using Thin Film of GTO by MistCVD Method Yuta Takishita, Sumio Sugisaki (Ryukoku Univ.), Daichi Koretomo, Yusaku Magari, Mamoru Furuta (KUT), Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) |
We made devices using Ga-Sn-O(GTO) thin films deposited by mist CVD method. A thin film transistor incorporating GTO pre... [more] |
IDY2018-57 pp.13-16 |
IEICE-EID, IEICE-SDM, IDY [detail] |
2018-12-25 14:30 |
Kyoto |
|
Dependence of thermoelectric properties and structure of Ga-Sn-O thin films on annealing Yoku Ikeguchi, Tatsuya Aramaki (Ryukoku Univ.), Kenta Umeda, Mutsunori Uenuma (NAIST), Daichi Koretomo, Yusaku Magari, Mamoru Furuta (KUT), Mutsumi Kimura (Ryukoku Univ.) |
Ga-Sn-O(GTO) thin films were formed using RF magnetron sputtering, and the influence of deposition pressure and crystal ... [more] |
IDY2018-59 pp.33-36 |
IDY |
2018-03-08 15:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
Self-Aligned Source/Drain Formation Technology by AlO Sputtering Realizing Highly Reliable Oxide TFT Backplane Hiroshi Hayashi, Atsuhito Murai, Masanori Miura, Yasuhiro Terai, Yoshihiro Oshima, Tohru Saitoh, Yasunobu Hiromasu, Toshiaki Arai (JOLED) |
We have developed a novel fabrication process of self-aligned top-gate oxide TFT suitable for high resolution and high s... [more] |
IDY2018-21 pp.31-35 |
IDY |
2018-03-08 16:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
Simulation Study of Novel Thin-Film Devices Using Depletion State of Amorphous Oxide Semiconductor Katsumi Abe, Masato Fujinaga, Takeshi Kuwagaki (Silvaco Japan) |
Novel thin-film devices using amorphous oxide semiconductor (AOS) were studied via device simulation. The simulation of ... [more] |
IDY2018-22 pp.37-41 |
IDY |
2017-02-24 15:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Highly Reliable Oxide TFT with Original Solution-Processed Materials Yukiko Hirano, Minehide Kusayanagi, Sadanori Arae, Ryoichi Saotome, Yuji Sone, Shinji Matsumoto, Yuki Nakamura, Yuichi Ando, Naoyuki Ueda, Katsuyuki Yamada (Ricoh) |
We have developed original oxide materials and inks to make TFT. The original materials were doped-oxide semiconductor, ... [more] |
IDY2017-23 pp.23-27 |
IST |
2015-09-18 14:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
High-Sensitivity Image Sensor with Stacked Structure comprising Crystalline Selenium Photoconductor, Crystalline OS FET, and CMOS FET Yoshiyuki Kurokawa, Takashi Nakagawa, Shuhei Maeda, Takuro Ohmaru, Takayuki Ikeda, Yasutaka Suzuki, Naoto Yamade, Hidekazu Miyairi (SEL), Shigeyuki Imura, Kenji Kikuchi, Kazunori Miyakawa, Hiroshi Ohtake, Misao Kubota (NHK), Makoto Ikeda, Shunpei Yamazaki (SEL) |
To realize a high-sensitivity CMOS image sensor using avalanche multiplication, we investigate the feasibility of a pixe... [more] |
IST2015-51 pp.33-36 |
IDY, IEICE-EID, SID-JC [detail] |
2015-07-30 13:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
Reflective LCD with High Resolution and Low Power Consumption Daisuke Kubota, Ryo Hatsumi, Yasuhiro Niikura, Tetsuji Ishitani, Yoshiharu Hirakata, Shunpei Yamazaki (SEL), Ami Nakamura, Yuka Cyubachi, Masahiro Katayama, Hiroyuki Miyake (AFD) |
We succeeded in fabricating a prototype of 434-ppi 5.9-in reflective LCD for use as an e-book reader by achieving idling... [more] |
IDY2015-33 pp.9-12 |
IDY |
2014-03-07 14:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Crystalline Oxide Semiconductor and Its Application to Information Display Jun Koyama, Koji Dairiki (SEL), Kenichi Okazaki, Junichi Koezuka (AFD Inc), Hiroyuki Miyake, Daisuke Matsubayashi, Yoshitaka Yamamoto, Shunpei Yamazaki (SEL) |
This study shows the physical properties of a crystalline oxide semiconductor and its information display application. [more] |
IDY2014-20 pp.9-14 |
IDY, IEICE-EID, IEE-EDD |
2013-01-25 10:02 |
Shizuoka |
Shizuoka Univ. |
Development of Simulation Model for Oxide Semiconductor Thin-Film Transistors Hiroshi Tsuji, Mitsuru Nakata, Hiroto Sato, Yoshiki Nakajima, Yoshihide Fujisaki, Tatsuya Takei, Toshihiro Yamamoto, Hideo Fujikake (NHK) |
A new simulation model for current-voltage characteristics of oxide semiconductor thin-film transistors (a-IGZO TFTs) is... [more] |
IDY2013-7 pp.69-72 |
IDY, IEICE-EID |
2012-11-07 15:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Report on IMID 2012
-- Thin-Film Transistor technologies -- Aya Hino, Kazushi Hayashi (Kobelco) |
We review the papers that were presented in the session of TFT-related technologies at IMID 2012. [more] |
IDY2012-63 pp.13-16 |