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| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| IST |
2021-03-26
09:25 |
Tokyo |
Online |
Evaluation of the effect of the 3D defect distribution created by plasma process on the dark current characteristics
Yoshihiro Sato, Takayoshi Yamada, Kazuko Nishimura, Masayuki Yamasaki, Masashi Murakami (Panasonic), Keiichiro Urabe, Koji Eriguchi (Kyoto Univ.) |
Plasma processing is widely used in manufacturing present-day ULSI circuits. During plasma processing, defects are creat... [more] |
IST2021-9
pp.5-8 |
| IST |
2020-03-27
14:20 |
Tokyo |
Kikaishinko kaikan
(Postponed) |
An Organic-Photoconductive-Film Stacked 1/2.3inch 20M CMOS Image Sensor using Ternary Organic Materials with 15pA/cm2 Low Dark Current and 84% High Quantum Efficiency at 5V Bias
Hidekazu Takahashi, Akihiro Seno, Jun Kamatani, Tatsuhito Goden, Koichi Ishige, Eturo Kishi, Naoki Yamada, Hiroki Orui, Hironobu Iwawaki, Itaru Takaya, Yosuke Nishida, Hirokazu Miyashita, Tetsuo Takahashi, Tomona Yamaguchi, Satoru Shiobara, Takeshi Ichikawa (CANON INC.) |
A 1/2.3-inch 20M pixel Organic-Photoconductive-Film (OPF) stacked CMOS image sensor using new ternary organic materials ... [more] |
IST2020-18
pp.47-50 |
| IST |
2014-09-29
14:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
A Novel Curved CMOS Image Sensor Integrated with Imaging System
Takayuki Ezaki, Kazuichiro Itonaga (SONY), Toshiyuki Arimura, Keiji Matsumoto (Sony Oita), Goro Kondo (Sony Kumamoto), Kazuhide Terahata, Makimoto Shinsaku, Masakazu Baba, Yasunori Honda, Seigo Bori, Toru Kai, Keijyu Kasahara (Sony Oita), Mitsuhiro Nagano, Masayuki Kimura, Yoshinori Kimura (Sony Kumamoto) |
We realized an ultimately advanced imaging system that comprises a hemi-spherically curved, back-illuminated
CMOS image... [more] |
IST2014-41
pp.1-4 |
| IST |
2014-03-14
16:40 |
Tokyo |
NHK |
Low Noise Multi-aperture camera by Selective Averaging
Bo Zhang, Keiichiro Kagawa, Taishi Takasawa, Min-Woong Seo, Keita Yasutomi, Shoji Kawahito (Shizuoka Univ.) |
A low noise multi-aperture camera which has a synthetic F-number much smaller than 1.0 by increasing optical gain using ... [more] |
IST2014-16
pp.31-34 |
| IST, CE |
2012-03-30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Extremely-Low-Noise CMOS Image Sensor with High Saturation Capacity
Kazuichiroh Itonaga, Kyohei Mizuta, Toyotaka Kataoka, Harumi Ikeda, Masashii Yanagita, Hiroaki Ishiwata, Yusuke Tanaka, Takashi Wakano, Yoshihisa Matoba, Tetsuya Oishi, Ryou Yamamoto, Shinichi Arakawa, Jun Komachi, Mikio Katsumata, Shinya Watanabe (Sony) |
We have developed a flat device structure, which we call “FLAT”, with no isolation grooves/ridges and no Si substrate et... [more] |
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