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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 16 of 16  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
IEICE-MRIS, MMS 2023-06-08
15:25
Miyagi RIEC, Tohoku Univ.
(Primary: On-site, Secondary: Online)
Fabrication of oxide/nitride matrix thin films by pulsed DC reactive sputtering method for realization of Co-based superparamagnetic granular thin films with high magnetization
Takumi Kobayashi, Ryutaro Ono, Genta Egawa, Satoru Yoshimura (Akita Univ.)
In order to realize a Co-based superparamagnetic granular thin film with high magnetization, which can create new magnet... [more] MMS2023-35
pp.1-8
IEICE-MRIS, MMS 2022-06-10
14:45
Miyagi RIEC, Tohoku Univ.
(Primary: On-site, Secondary: Online)
Effect of Co substitution concentration on various magnetic properties of (Bi1-xBax)(Fe1-yCoy)O3 multiferroic thin films and consideration on the origin of those magnetic properties
Takumi Ozeki, Genta Egawa, Satoru Yoshimura (Akita Univ.)
Development of Ferromagnetism / ferroelectric thin films with large saturation magnetization, perpendicular magnetic ani... [more] MMS2022-40
pp.45-51
IEICE-MRIS, MMS 2021-10-08
13:00
Online Online Structure and Magnetostrictive Properties of Fe-Co Alloy Single-Crystal Thin Films and Poly-Crystal Thick Films
Yuta Nakamura, Shunsuke Aketa, Hikaru Kondo, Mitsuru Ohtake, Tetsuroh Kawai, Masaaki Futamoto (Yokohama Nat. Univ.), Fumiyoshi Kirino (Tokyo Univ. Arts), Nobuyuki Inaba (Yamagata Univ.)
Fe-Co alloys with large magnetostriction have attracted much attention to magnetostrictive vibration power generation de... [more]
IEICE-MRIS, MMS 2021-06-10
16:15
Miyagi RIEC, Tohoku U.
(Primary: On-site, Secondary: Online)
Dependence of perpendicular magnetic anisotropy and magnetic Kerr effect in (Bi,La)(Fe1-xCox)O3 multiferroic thin films on Co substitution concentration against Fe
Takumi Ozeki, Daichi Yamamoto, Genta Egawa, Satoru Yoshimura (Akita Univ.)
High saturation magnetization and perpendicular magnetic anisotropy are required for multiferroic (ferromagnetic / ferro... [more] MMS2021-31
pp.29-34
IDY, IEICE-EID, SID-JC [detail] 2020-10-16
13:55
Online Online [Invited Lecture] 5µm-Thickness-Low-Retardation Plastic Foil with Gas Barrier and Transparent Conductive Layers for Bendable Devices
Hiroki Kinoshita, Takehiro Ohashi, Takumi Furuya, Satoshi Naganawa (LINTEC)
A 5 µm thickness foil with low retardation less than 1.0 nm and excellent thermal stability at 150 oC was presented. Ove... [more] IDY2020-33
pp.9-12
IDY, IEICE-EID, IEIJ-SSL, SID-JC, IEE-EDD [detail] 2020-01-24
10:55
Tottori Tottori Univ [Poster Presentation] Current injection type emission devices using conductive ternary sulfide/oxide phosphor thin films
Kazuki Tsujimori, Syunjo Koga, Tadashi Ishigki, Koutoku Ohmi (Tottori Univ.)
In this study, the fabrication of current-injection type light-emitting devices using CuAlS_2:Mn and ZnGa_2O_4:Cr polycr... [more]
IEICE-SDM, IEICE-EID, IDY [detail] 2019-12-24
14:45
Nara NAIST In-vitro experiments of artificial retina using thin film device
Kohei Toyoda, Keisuke Tomioka, Keigo Misawa, Naoya Naitou, Mutsumi Kimura (Ryukoku Univ)
We have developed an artificial retina using thin-film transistors (TFT) and thin-film phototransistors (TFPT). We drove... [more] IDY2019-71
pp.17-20
IDY, IEICE-EID, IEIJ-SSL, SID-JC, IEE-EDD [detail] 2019-01-25
09:55
Kagoshima   [Poster Presentation] Current injection type emission devices using CuAlS2:Mn phosphor thin films -- SiO2 barrier layer suppressing interfacial diffusion between phosphor/electrode layers --
Shogo Ueda, Kazuki Tujimori, Tadashi Ishigaki, Koutoku Ohmi (Tottori Univ.)
Red light-emitting devices consisting of CuAlS2:Mn polycrystalline phosphor thin films have been investigated. CuAlS2:Mn... [more] IDY2019-17
pp.81-84
IEICE-EID, IEICE-SDM, IDY [detail] 2018-12-25
11:45
Kyoto   Device Using Thin Film of GTO by MistCVD Method
Yuta Takishita, Sumio Sugisaki (Ryukoku Univ.), Daichi Koretomo, Yusaku Magari, Mamoru Furuta (KUT), Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)
We made devices using Ga-Sn-O(GTO) thin films deposited by mist CVD method. A thin film transistor incorporating GTO pre... [more] IDY2018-57
pp.13-16
IEICE-EID, IEICE-SDM, IDY [detail] 2018-12-25
15:30
Kyoto   IGZO thin film synapse for brain type integrated system
Yuki Shibayama, Daiki Yamakawa, Keisuke Ikushima, Sumio Sugisaki, Mutsumi Kimura (Ryukoku Univ.), Yasuhiko Nakashima (Nara Institute of Science and Technology)
We are researching and developing neural networks using thin film devices.In this study, we fabricated In-Ga-Zn-O (IGZO)... [more] IDY2018-63
pp.49-52
IDY 2018-03-08
16:15
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Simulation Study of Novel Thin-Film Devices Using Depletion State of Amorphous Oxide Semiconductor
Katsumi Abe, Masato Fujinaga, Takeshi Kuwagaki (Silvaco Japan)
Novel thin-film devices using amorphous oxide semiconductor (AOS) were studied via device simulation. The simulation of ... [more] IDY2018-22
pp.37-41
IEICE-EID, IDY, IEE-EDD, SID-JC, IEIJ-SSL [detail] 2016-01-28
14:10
Toyama Toyama Univ. Cellar Neural using Thin-Film Devices -- Working Confirmation of Letter Recognition --
Mutsumi Kimura, Ryohei Morita, Sumio Sugisaki, Tokiyoshi Matsuda (Ryukoku Univ.)
We are developing cellular neural networks using thin-film devices. Because thin-film devices can be fabricated on large... [more]
IEICE-EID, IDY, IEE-EDD, SID-JC, IEIJ-SSL [detail] 2016-01-28
14:18
Toyama Toyama Univ. Retinal Prosthesis using Thin-Film Devices -- Working Confirmation using in vitro Experiment --
Mutsumi Kimura, Shota Haruki, Keisuke Tomioka, Tokiyoshi Matsuda (Ryukoku Univ.)
We are developing artificial retinas using thin-film devices. Because thin-film devices can be fabricated on transparent... [more]
IEICE-EID, IDY, IEE-EDD, SID-JC, IEIJ-SSL [detail] 2016-01-29
11:33
Toyama Toyama Univ. Injection EL Devices Using CuAlS2:Mn Conductive Phosphor Thin Films
Takayoshi Adachi, Shouta Hayashi (Tottori Univ.), Tadashi Ishigaki (TiFREC), Koutoku Ohmi (Tottori Univ.)
Current injection type DC electroluminescent (EL) devices having a polycrystalline CuAlS2:Mn phosphor layer have been pr... [more]
IDY, IEICE-EID, IEE-EDD 2013-01-24
13:46
Shizuoka Shizuoka Univ. CuAlS2:Mn Thin Film EL devices having low threshold voltage
Yusuke Nakamura, Yuki Oshima, Koutoku Ohmi (Tottori Univ)
CuAlS2:Mn red phosphor thin films have been prepared by electron-beam (EB) evaporation method using CuAlS2:Mn phosphor p... [more] IDY2013-2
pp.9-12
IDY, IEICE-EID, IEE-EDD 2013-01-25
10:02
Shizuoka Shizuoka Univ. Development of Simulation Model for Oxide Semiconductor Thin-Film Transistors
Hiroshi Tsuji, Mitsuru Nakata, Hiroto Sato, Yoshiki Nakajima, Yoshihide Fujisaki, Tatsuya Takei, Toshihiro Yamamoto, Hideo Fujikake (NHK)
A new simulation model for current-voltage characteristics of oxide semiconductor thin-film transistors (a-IGZO TFTs) is... [more] IDY2013-7
pp.69-72
 Results 1 - 16 of 16  /   
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