Paper Abstract and Keywords |
Presentation |
2015-03-27 10:30
25.3uW at 60fps 240x160 Pixel Vision Sensor for Motion Capturing with In-Pixel Non-volatility Analog Memory Using Crystalline Oxide Semiconductor FET Takuro Ohmaru, Takashi Nakagawa, Shuhei Maeda, Yuki Okamoto, Munehiro Kozuma, Seiichi Yoneda, Hiroki Inoue, Yoshiyuki Kurokawa, Takayuki Ikeda, Yoshinori Ieda, Naoto Yamade, Hidekazu Miyairi (SEL), Makoto Ikeda (Tokyo Univ.), Yoshitaka Yamamoto, Shunpei Yamazaki (SEL) |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have fabricated a vision sensor with in-pixel non-volatility analog memory using a c-axis aligned crystalline oxide semiconductor FET that demonstrates very low off-state current. The pixel is possible to retain not only capturing image data but also differential image data of a given reference flame for a long time. Thus, the vision sensor can realize normal image capturing and extracting a differential image by an electronic global shutter, and motion capturing by judging the presence or absence of differences. Furthermore, it has three modes of operations, and can reduce power consumption by power gating idling blocks in each mode. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
CAAC-IGZO / Off-state current / Vision sensor / Global shutter / Differential frame / Motion capture / / |
Reference Info. |
ITE Tech. Rep., vol. 39, no. 16, IST2015-13, pp. 13-16, March 2015. |
Paper # |
IST2015-13 |
Date of Issue |
2015-03-20 (IST) |
ISSN |
Print edition: ISSN 1342-6893 Online edition: ISSN 2424-1970 |
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