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Paper Abstract and Keywords
Presentation 2015-05-08 15:00
Effect of random telegraph noise reduction by atomically flat gate insulator film/Si interface
Rihito Kuroda, Toshiki Obara, Tetsuya Goto, Naoya Akagawa, Daiki Kimoto, Akinobu Teramoto, Shigetoshi Sugawa (Tohoku Univ.)
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Reference Info. ITE Tech. Rep., vol. 39, no. 17, IST2015-33, pp. 35-38, May 2015.
Paper # IST2015-33 
Date of Issue 2015-05-01 (IST) 
ISSN Print edition: ISSN 1342-6893  Online edition: ISSN 2424-1970
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Conference Information
Committee IST  
Conference Date 2015-05-08 - 2015-05-08 
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Paper Information
Registration To IST 
Conference Code 2015-05-IST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effect of random telegraph noise reduction by atomically flat gate insulator film/Si interface 
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1st Author's Name Rihito Kuroda  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Toshiki Obara  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Tetsuya Goto  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Naoya Akagawa  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Daiki Kimoto  
5th Author's Affiliation Tohoku University (Tohoku Univ.)
6th Author's Name Akinobu Teramoto  
6th Author's Affiliation Tohoku University (Tohoku Univ.)
7th Author's Name Shigetoshi Sugawa  
7th Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker
Date Time 2015-05-08 15:00:00 
Presentation Time 30 
Registration for IST 
Paper # ITE-IST2015-33 
Volume (vol) ITE-39 
Number (no) no.17 
Page pp.35-38 
#Pages ITE-4 
Date of Issue ITE-IST-2015-05-01 


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