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Paper Abstract and Keywords
Presentation 2016-08-03 15:30
Performance Enhancement of Tunnel FET by Negative Capacitance
Masaharu Kobayashi, Kyungmin Jang, Nozomu Ueyama, Toshiro Hiramoto (Univ. of Tokyo)
Abstract (in Japanese) (See Japanese page) 
(in English) IoT devices in a sensor network require a new energy-efficient transistor which operates at ultralow voltage and power employing energy-harvesting techniques. In this paper, we propose a new steep slope transistor by combining the feature of tunnel FET(TFET) and negative capacitance FET(NCFET) which have been independently studied so far. In NCTFET, band-to-band tunneling in TFET can be enhanced by negative capacitance effect of ferroelectric gate insulator. This results in improvement of subthreshold slope. The energy efficiency of NCTFET is about 10 times higher than conventional MOSFET and TFET. Therefore, NCTFET is expected to become a new CMOS platform for IoT application.
Keyword (in Japanese) (See Japanese page) 
(in English) Tunnel FET / Negative Capacitance FET / steep slope transistor / ferroelectric / / / /  
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Conference Information
Conference Date 2016-08-01 - 2016-08-03 
Place (in Japanese) (See Japanese page) 
Place (in English) Central Electric Club 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low voltage/low power techniques, novel devices, circuits, and applications 
Paper Information
Registration To IEICE-SDM 
Conference Code 2016-08-ICD-SDM-IST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Performance Enhancement of Tunnel FET by Negative Capacitance 
Sub Title (in English)  
Keyword(1) Tunnel FET  
Keyword(2) Negative Capacitance FET  
Keyword(3) steep slope transistor  
Keyword(4) ferroelectric  
1st Author's Name Masaharu Kobayashi  
1st Author's Affiliation The University of Tokyo (Univ. of Tokyo)
2nd Author's Name Kyungmin Jang  
2nd Author's Affiliation The University of Tokyo (Univ. of Tokyo)
3rd Author's Name Nozomu Ueyama  
3rd Author's Affiliation The University of Tokyo (Univ. of Tokyo)
4th Author's Name Toshiro Hiramoto  
4th Author's Affiliation The University of Tokyo (Univ. of Tokyo)
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Speaker Author-1 
Date Time 2016-08-03 15:30:00 
Presentation Time 25 minutes 
Registration for IEICE-SDM 
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Volume (vol) vol.40 
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