ITE Technical Group Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2018-03-09 16:15
[Invited Talk] SOI monolithic pixel technology for radiation image sensor
Yasuo Arai, Toshinobu Miyoshi, Ikuo Kurachi (KEK)
Abstract (in Japanese) (See Japanese page) 
(in English) Silicon-On-Insulator (SOI) technology is a suitable choice to realize monolithic radiation imaging device as it involves a separate thick silicon layer in addition to a circuit layer. However, there are several issues to overcome for using radiation sensors and CMOS LSI circuits on a same die, i.e., the back-gate effect, coupling between sensors and circuits, and the total ionization dose (TID) effect. These issues have been solved by introducing a middle Si layer between the sensor and circuit layer (double SOI). By introducing multiple buried layer, lower noise and high charge collection efficiency is obtained. In addition, a small pixel size is achieved by using the PMOS and NMOS active merge technique in the SOI. This enables a much smaller layout size than that in the bulk CMOS process with the same feature size.
Keyword (in Japanese) (See Japanese page) 
(in English) X-ray / Quantum Beam / Silicon-On-Insulator / SOI / Image Sensor / 3D Integration / /  
Reference Info. ITE Tech. Rep., vol. 42, no. 10, IST2018-25, pp. 61-66, March 2018.
Paper # IST2018-25 
Date of Issue 2018-03-02 (IST) 
ISSN Print edition: ISSN 1342-6893    Online edition: ISSN 2424-1970
Download PDF

Conference Information
Committee IST  
Conference Date 2018-03-09 - 2018-03-09 
Place (in Japanese) (See Japanese page) 
Place (in English) NHK Housou-Gijyutu Lab. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Image Sensors, etc. 
Paper Information
Registration To IST 
Conference Code 2018-03-IST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) SOI monolithic pixel technology for radiation image sensor 
Sub Title (in English)  
Keyword(1) X-ray  
Keyword(2) Quantum Beam  
Keyword(3) Silicon-On-Insulator  
Keyword(4) SOI  
Keyword(5) Image Sensor  
Keyword(6) 3D Integration  
1st Author's Name Yasuo Arai  
1st Author's Affiliation High Energy Accelerator Research Organization (KEK)
2nd Author's Name Toshinobu Miyoshi  
2nd Author's Affiliation High Energy Accelerator Research Organization (KEK)
3rd Author's Name Ikuo Kurachi  
3rd Author's Affiliation High Energy Accelerator Research Organization (KEK)
4th Author's Name  
4th Author's Affiliation ()
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker Author-1 
Date Time 2018-03-09 16:15:00 
Presentation Time 25 minutes 
Registration for IST 
Paper # IST2018-25 
Volume (vol) vol.42 
Number (no) no.10 
Page pp.61-66 
Date of Issue 2018-03-02 (IST) 

[Return to Top Page]

[Return to ITE Web Page]

The Institute of Image Information and Television Engineers (ITE), Japan