| Conference Information |
| Committee |
IST IEICE-ICD IEICE-SDM |
| Conference Date |
2018-08-07 - 2018-08-09 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
Hokkaido University M Bldg. M151 |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
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| Paper Information |
| Registration To |
IEICE-ICD |
| Conference Code |
2018-08-SDM-ICD-IST |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Study of Impact of BTI's Local Layout Effect Including Recovery Effect on Various Standard-Cells in 10nm FinFET |
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| 1st Author's Name |
Mitsuhiko Igarashi |
| 1st Author's Affiliation |
Renesas Electronics Corp. (Renesas) |
| 2nd Author's Name |
Yuuki Uchida |
| 2nd Author's Affiliation |
Renesas Electronics Corp. (Renesas) |
| 3rd Author's Name |
Yoshio Takazawa |
| 3rd Author's Affiliation |
Renesas Electronics Corp. (Renesas) |
| 4th Author's Name |
Yasumasa Tsukamoto |
| 4th Author's Affiliation |
Renesas Electronics Corp. (Renesas) |
| 5th Author's Name |
Koji Shibutani |
| 5th Author's Affiliation |
Renesas Electronics Corp. (Renesas) |
| 6th Author's Name |
Koji Nii |
| 6th Author's Affiliation |
Renesas Electronics Corp. (Renesas) |
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| Speaker |
Author-1 |
| Date Time |
2018-08-09 12:45:00 |
| Presentation Time |
25 minutes |
| Registration for |
IEICE-ICD |
| Paper # |
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| Volume (vol) |
vol.42 |
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