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Paper Abstract and Keywords
Presentation 2019-09-20 10:30
Back Side Illuminated High Dynamic Range 4.0um Voltage Domain Global Shutter Pixel
Toshiyuki Isozaki, Kazuya Mori, Ken Miyauchi, Naoto Yasuda, Yusuke Sawai, Alex Tsai, Isao Takayanagi, Junichi Nakamura (BRILLNICS)
Abstract (in Japanese) (See Japanese page) 
(in English) A backside illuminated image sensors with a 4.0μm global shutter (GS) pixel has been fabricated in a 45nm/65nm stacked CMOS process as a proof-of-concept vehicle. The pixel components for photon-to-voltage conversion are formed on the top substrate (the 1st layer). Each photo converted signal from the 1st layer pixel is stored in sample-and-hold (S/H) capacitors on the bottom substrate (the 2nd layer) via micro-bump interconnection to achieve a voltage domain GS function. The 2 sets of voltage domain storage capacitor per pixel enable a multiple gain readout to realize single exposure high dynamic range (SEHDR) [1] in the GS operation.
Keyword (in Japanese) (See Japanese page) 
(in English) CMOS Image Sensor / High Dynamic Range / High Sensitivity / High Full Well Capacity / Low Noise / Single Exposure / Multiple Conversion Gains / Voltage Domain Global Shutter  
Reference Info. ITE Tech. Rep., vol. 43, no. 31, IST2019-44, pp. 5-8, Sept. 2019.
Paper # IST2019-44 
Date of Issue 2019-09-13 (IST) 
ISSN Print edition: ISSN 1342-6893    Online edition: ISSN 2424-1970
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Conference Information
Committee IST  
Conference Date 2019-09-20 - 2019-09-20 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Image Sensor , etc. 
Paper Information
Registration To IST 
Conference Code 2019-09-IST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Back Side Illuminated High Dynamic Range 4.0um Voltage Domain Global Shutter Pixel 
Sub Title (in English)  
Keyword(1) CMOS Image Sensor  
Keyword(2) High Dynamic Range  
Keyword(3) High Sensitivity  
Keyword(4) High Full Well Capacity  
Keyword(5) Low Noise  
Keyword(6) Single Exposure  
Keyword(7) Multiple Conversion Gains  
Keyword(8) Voltage Domain Global Shutter  
1st Author's Name Toshiyuki Isozaki  
1st Author's Affiliation BRILLNICS Japan Inc. (BRILLNICS)
2nd Author's Name Kazuya Mori  
2nd Author's Affiliation BRILLNICS Japan Inc. (BRILLNICS)
3rd Author's Name Ken Miyauchi  
3rd Author's Affiliation BRILLNICS Japan Inc. (BRILLNICS)
4th Author's Name Naoto Yasuda  
4th Author's Affiliation BRILLNICS Japan Inc. (BRILLNICS)
5th Author's Name Yusuke Sawai  
5th Author's Affiliation BRILLNICS Japan Inc. (BRILLNICS)
6th Author's Name Alex Tsai  
6th Author's Affiliation BRILLNICS Inc. (BRILLNICS)
7th Author's Name Isao Takayanagi  
7th Author's Affiliation BRILLNICS Japan Inc. (BRILLNICS)
8th Author's Name Junichi Nakamura  
8th Author's Affiliation BRILLNICS Japan Inc. (BRILLNICS)
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Speaker Author-1 
Date Time 2019-09-20 10:30:00 
Presentation Time 30 minutes 
Registration for IST 
Paper # IST2019-44 
Volume (vol) vol.43 
Number (no) no.31 
Page pp.5-8 
Date of Issue 2019-09-13 (IST) 

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