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Paper Abstract and Keywords
Presentation 2019-12-24 16:40
Electrode dependence of memristor characteristic of Resistive Random Access Memory using Ga-Sn-O thin film
Kaito Hashimoto, Ayata Kurasaki, Ryo Tanaka, Sumio Sugisaki, Ryo Sumida, Mutsumi Kimura (Ryukoku Univ.)
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Reference Info. ITE Tech. Rep., vol. 43, no. 44, IDY2019-74, pp. 29-32, Dec. 2019.
Paper # IDY2019-74 
Date of Issue 2019-12-17 (IDY) 
ISSN Print edition: ISSN 1342-6893    Online edition: ISSN 2424-1970
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Conference Information
Committee IEICE-SDM IEICE-EID IDY  
Conference Date 2019-12-24 - 2019-12-24 
Place (in Japanese) (See Japanese page) 
Place (in English) NAIST 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Semiconductor Material Process and Device Meeting 
Paper Information
Registration To IDY 
Conference Code 2019-12-SDM-EID-IDY 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Electrode dependence of memristor characteristic of Resistive Random Access Memory using Ga-Sn-O thin film 
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1st Author's Name Kaito Hashimoto  
1st Author's Affiliation Ryukoku University (Ryukoku Univ.)
2nd Author's Name Ayata Kurasaki  
2nd Author's Affiliation Ryukoku University (Ryukoku Univ.)
3rd Author's Name Ryo Tanaka  
3rd Author's Affiliation Ryukoku University (Ryukoku Univ.)
4th Author's Name Sumio Sugisaki  
4th Author's Affiliation Ryukoku University (Ryukoku Univ.)
5th Author's Name Ryo Sumida  
5th Author's Affiliation Ryukoku University (Ryukoku Univ.)
6th Author's Name Mutsumi Kimura  
6th Author's Affiliation Ryukoku University (Ryukoku Univ.)
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Date Time 2019-12-24 16:40:00 
Presentation Time 20 minutes 
Registration for IDY 
Paper # IDY2019-74 
Volume (vol) vol.43 
Number (no) no.44 
Page pp.29-32 
#Pages
Date of Issue 2019-12-17 (IDY) 


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