Paper Abstract and Keywords |
Presentation |
2022-03-28 11:35
A branching gate image sensor with a central resistive gate Takeharu Goji Etoh (Osaka Univ.), Ngo Hoai Nguyen (Ritsumeikan Univ.), Heiji Watanabe (Osaka Univ.), Takayoshi Shimura, Yoshiyuki Matsunaga, Yutaka Hirose (Ritsumeikan Univ.), Hideki Mutoh (Link Research), Kazuhiro Shimonomura (Ritsumeikan Univ.) |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A BSI branching gate (multi-tap) image sensor has a wide octagonal center gate at the center of the pixel. Electrons fall from the photodiode distribute over the center gate. They take different times to reach one edge of the center gate, where the potential is higher than those at other edges. The distributed falling positions causes a temporal distribution of the arrival time to the edge and elongate the temporal resolution. An old CCD technology “a resistive gate”, which has a plural of contacts on one electrode, is applied to the center gate to approximately linearize the potential profile along the travel route of the electrons, which minimizes the temporal resolution. The pros and cons of the structure are discussed. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
super temporal resolution / burst image sensor / registive gate / / / / / |
Reference Info. |
ITE Tech. Rep., vol. 46, no. 14, IST2022-15, pp. 21-24, March 2022. |
Paper # |
IST2022-15 |
Date of Issue |
2022-03-21 (IST) |
ISSN |
Print edition: ISSN 1342-6893 Online edition: ISSN 2424-1970 |
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