| Conference Information |
| Committee |
IEICE-ICD IEICE-SDM IST |
| Conference Date |
2023-08-01 - 2023-08-03 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
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| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications |
| Paper Information |
| Registration To |
IEICE-SDM |
| Conference Code |
2023-08-SDM-ICD-IST |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx Electrode for 3D Integrated Devices |
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| 1st Author's Name |
Masaharu Kobayashi |
| 1st Author's Affiliation |
The University of Tokyo (Univ. Tokyo) |
| 2nd Author's Name |
Kaito Hikake |
| 2nd Author's Affiliation |
The University of Tokyo (Univ. Tokyo) |
| 3rd Author's Name |
Zhuo Li |
| 3rd Author's Affiliation |
The University of Tokyo (Univ. Tokyo) |
| 4th Author's Name |
Junxiang Hao |
| 4th Author's Affiliation |
The University of Tokyo (Univ. Tokyo) |
| 5th Author's Name |
Chitra Pandy |
| 5th Author's Affiliation |
The University of Tokyo (Univ. Tokyo) |
| 6th Author's Name |
Takuya Saraya |
| 6th Author's Affiliation |
The University of Tokyo (Univ. Tokyo) |
| 7th Author's Name |
Toshiro Hiramoto |
| 7th Author's Affiliation |
The University of Tokyo (Univ. Tokyo) |
| 8th Author's Name |
Takanori Takahashi |
| 8th Author's Affiliation |
NAIST (NAIST) |
| 9th Author's Name |
Mutsunori Uenuma |
| 9th Author's Affiliation |
NAIST (NAIST) |
| 10th Author's Name |
Yukiharu Uraoka |
| 10th Author's Affiliation |
NAIST (NAIST) |
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| Speaker |
Author-1 |
| Date Time |
2023-08-02 13:15:00 |
| Presentation Time |
45 minutes |
| Registration for |
IEICE-SDM |
| Paper # |
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| Volume (vol) |
vol.47 |
| Number (no) |
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