| Paper Abstract and Keywords |
| Presentation |
2023-09-15 14:10
0.56um-pitch CMOS image sensor for high resolution application
Chun Yung Ai, Kazufumi Watanabe, Sangjoo Lee, Geunsook Park (OVT US), Akira Imaizumi (OVT Japan), King W. Yeung (OVT US), Shun Cheng Tien, Pei Hsiu Tseng (OVT Taiwan), Alan Chih-Wei Hsiung, Lindsay A. Grant (OVT US) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
In this paper we describe a 200Mpixel CMOS image sensor with 0.56um pixels implemented in a 28nm process. This pixel technology is the next generation development after our 0.61um pixel. The sensor demonstrates a full well capacity of 5.5ke- with lower dark current and read noise than our previous generation pixel. In addition, this sensor demonstrates similar quantum efficiency (QE) and phase detection autofocus (PDAF) performance in comparison to our previous generation pixels. This sensor also implements multiple functions including switched conversion gain and high-speed readout. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
CMOS image sensor / 0.56um pixel / Small pixel / 200Mp / / / / |
| Reference Info. |
ITE Tech. Rep., vol. 47, no. 27, IST2023-41, pp. 25-28, Sept. 2023. |
| Paper # |
IST2023-41 |
| Date of Issue |
2023-09-08 (IST) |
| ISSN |
Online edition: ISSN 2424-1970 |
| Download PDF |
|