| Paper Abstract and Keywords |
| Presentation |
2024-06-06 13:30
Fabrication of high-quality α"-Fe16N2 thin film with high saturation magnetization using pulsed DC reactive sputtering method
Ikuko Katsuyama, Genta Egawa, Satoru Yoshimura (Akita Univ.) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
An α"-Fe16N2 has very high saturation magnetization and as the result very high magnetic crystalline anisotropy energy even if magnetic anisotropy field is not so large. Therefore, magnetization switching field of this material is smaller than that of L10-FePt which has very high magnetic crystalline anisotropy energy and very high magnetic anisotropy field. As the results, α"-Fe16N2 seems one of the suitable materials for next-generation high density magnetic recording media without energy assisted recording system. In this study, for fabrication of α"-Fe16N2 thin films, we newly attempted a Pulsed DC (P-DC) Reactive Sputtering method, which is expected to provide high quality in the formation of oxide/nitride thin films with complex crystal structures. We investigated the influence of film composition on deposition parameters such as pulse frequency, deposition power, and target-substrate (T-S) distance. As a result, with decreasing pulse frequency, with increasing deposition power, and with decreasing T-S distance, nitrogen concentration in the thin film decreased, and it was clear that the optimized deposition conditions to obtain the nitrogen concentration of about Fe:N ≈ 16:2 in the thin film were pulse frequency: 25 kHz, deposition power: 200 W, and T-S distance: 100 mm, respectively. Using these deposition conditions, we investigated the deposition temperature and VHF plasma irradiation to promote the α" phase formation and crystallization in the fabrication of Fe-N thin films on MgO(100) single crystalline substrates. As a result, it was found that α" phase formation and crystallization were most enhanced at a deposition temperature of 200℃ and a VHF plasma irradiation voltage of -18 to -16 V. Moreover, by comparing to Fe-N thin films fabricated by using a P-DC power source and normal DC power source, reactive P-DC sputtering method was found to have a positive impact on α" phase formation and crystallization. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
α"-Fe16N2 / Pulsed DC reactive sputtering / VHF plasma irradiation / Saturation magnetization / Recoding media / / / |
| Reference Info. |
ITE Tech. Rep., vol. 48, no. 18, MMS2024-31, pp. 1-8, June 2024. |
| Paper # |
MMS2024-31 |
| Date of Issue |
2024-05-30 (MMS) |
| ISSN |
Online edition: ISSN 2424-1970 |
| Download PDF |
|
| Conference Information |
| Committee |
IEICE-MRIS MMS |
| Conference Date |
2024-06-06 - 2024-06-07 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
RIEC, Tohoku Univ. |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
Recording system, Head, Media, and Others |
| Paper Information |
| Registration To |
MMS |
| Conference Code |
2024-06-MRIS-MMS |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Fabrication of high-quality α"-Fe16N2 thin film with high saturation magnetization using pulsed DC reactive sputtering method |
| Sub Title (in English) |
|
| Keyword(1) |
α"-Fe16N2 |
| Keyword(2) |
Pulsed DC reactive sputtering |
| Keyword(3) |
VHF plasma irradiation |
| Keyword(4) |
Saturation magnetization |
| Keyword(5) |
Recoding media |
| Keyword(6) |
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| Keyword(7) |
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| Keyword(8) |
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| 1st Author's Name |
Ikuko Katsuyama |
| 1st Author's Affiliation |
Akita University (Akita Univ.) |
| 2nd Author's Name |
Genta Egawa |
| 2nd Author's Affiliation |
Akita University (Akita Univ.) |
| 3rd Author's Name |
Satoru Yoshimura |
| 3rd Author's Affiliation |
Akita University (Akita Univ.) |
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| Speaker |
Author-3 |
| Date Time |
2024-06-06 13:30:00 |
| Presentation Time |
25 minutes |
| Registration for |
MMS |
| Paper # |
MMS2024-31 |
| Volume (vol) |
vol.48 |
| Number (no) |
no.18 |
| Page |
pp.1-8 |
| #Pages |
8 |
| Date of Issue |
2024-05-30 (MMS) |