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Paper Abstract and Keywords
Presentation 2024-08-05 13:00
[Memorial Lecture] Simulation Method for the Mean Free Path of Semiconductor Nanosheets with Surface Roughness
Jo Okada, Hajime Tanaka, Nobuya Mori (Osaka Univ.)
Abstract (in Japanese) (See Japanese page) 
(in English) In semiconductor nanosheets, as the channel becomes thinner, the interface roughness scattering increases and the carrier mobility decreases. Many methods based on perturbation theory have been proposed to model the roughness scattering. In order to verify the validity of these approaches, a calculation method that does not rely on perturbation theory is needed. In this study, we propose a perturbation-free numerical method for the mean free path limited by the interface roughness scattering in single-mode semiconductor nanosheets. Using the proposed method, we calculate the dependence of the mean free path on the channel thickness (Tw), and show that the well-known Tw^6 dependence exists when Tw is large, but becomes weaker when Tw is small.
Keyword (in Japanese) (See Japanese page) 
(in English) semiconductor nanosheet / roughness scattering / Andersonlocalization / ultra-small transistor / device simulation / / /  
Reference Info. ITE Tech. Rep.
Paper #  
Date of Issue  
ISSN Online edition: ISSN 2424-1970
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Conference Information
Committee IEICE-ICD IEICE-SDM IST  
Conference Date 2024-08-05 - 2024-08-07 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English) Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications 
Paper Information
Registration To IEICE-SDM 
Conference Code 2024-08-SDM-ICD-IST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Simulation Method for the Mean Free Path of Semiconductor Nanosheets with Surface Roughness 
Sub Title (in English)  
Keyword(1) semiconductor nanosheet  
Keyword(2) roughness scattering  
Keyword(3) Andersonlocalization  
Keyword(4) ultra-small transistor  
Keyword(5) device simulation  
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1st Author's Name Jo Okada  
1st Author's Affiliation Osaka University (Osaka Univ.)
2nd Author's Name Hajime Tanaka  
2nd Author's Affiliation Osaka University (Osaka Univ.)
3rd Author's Name Nobuya Mori  
3rd Author's Affiliation Osaka University (Osaka Univ.)
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Speaker Author-1 
Date Time 2024-08-05 13:00:00 
Presentation Time 45 minutes 
Registration for IEICE-SDM 
Paper #  
Volume (vol) vol.48 
Number (no)  
Page  
#Pages  
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