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| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| IST |
2019-03-22
11:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Back-Illuminated 2.74 μm-Pixel-Pitch Global Shutter CMOS Image Sensor with Charge-Domain Memory Achieving a 10k e- Saturation Signal
Yoshimichi Kumagai, Ryoto Yoshita, Naoyuki Osawa, Harumi Ikeda, Kazuyoshi Yamashita, Takashi Abe, Shigetaka Kudoh (SSS), Junji Yamane, Tooru Idekoba, Shinichiro Nohdo, Yuma Ono, Sachihito Kunitake, Mitsuru Sato, Naoyuki Sato, Takayuki Enomoto (SCK), Keiichi Nakazawa, Hiroyuki Mori, Yasushi Tateshita, Keiichi Ohno (SSS) |
[more] |
IST2019-16
pp.21-25 |
| IST |
2018-03-09
15:30 |
Tokyo |
NHK Housou-Gijyutu Lab. |
Near-infrared Sensitivity Enhancement of a Back-illuminated Complementary Metal Oxide Semiconductor Image Sensor with a Pyramid Surface for Diffraction Structure
Itaru Oshiyama, Sozo Yokogawa, Harumi Ikeda, Yoshiki Ebiko, Tomoyuki Hirano, Suguru Saito, Oinoue Takashi, Yoshiya Hagimoto, Hayato Iwamoto (SSS) |
[more] |
IST2018-23
pp.51-54 |
| IST, CE |
2012-03-30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Extremely-Low-Noise CMOS Image Sensor with High Saturation Capacity
Kazuichiroh Itonaga, Kyohei Mizuta, Toyotaka Kataoka, Harumi Ikeda, Masashii Yanagita, Hiroaki Ishiwata, Yusuke Tanaka, Takashi Wakano, Yoshihisa Matoba, Tetsuya Oishi, Ryou Yamamoto, Shinichi Arakawa, Jun Komachi, Mikio Katsumata, Shinya Watanabe (Sony) |
We have developed a flat device structure, which we call “FLAT”, with no isolation grooves/ridges and no Si substrate et... [more] |
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