| Paper Abstract and Keywords |
| Presentation |
0000-00-00 00:00
Extremely-Low-Noise CMOS Image Sensor with High Saturation Capacity
Kazuichiroh Itonaga, Kyohei Mizuta, Toyotaka Kataoka, Harumi Ikeda, Masashii Yanagita, Hiroaki Ishiwata, Yusuke Tanaka, Takashi Wakano, Yoshihisa Matoba, Tetsuya Oishi, Ryou Yamamoto, Shinichi Arakawa, Jun Komachi, Mikio Katsumata, Shinya Watanabe (Sony) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
We have developed a flat device structure, which we call “FLAT”, with no isolation grooves/ridges and no Si substrate etching in the imaging area of the CMOS Image Sensor (CIS). We employed this FLAT structure to achieve a 1.12 μm pitch pixel CIS with a 1.25 transistor/pixel architecture and excellent image quality. It uses FLAT transistors (Trs) that generate greatly-reduced 1/f noise, and FLAT isolators (Isos) that increase the saturation capacity (Qs) due to increasing both effective photodiode (PD) area and PD potential under low dark current. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
isolation / dark current / shared pixel / noise / RTN / 1/f / damage / defect |
| Reference Info. |
ITE Tech. Rep. |
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