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| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| IST |
2025-09-18
13:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Charge domain type 2.2um BSI Global Shutter pixel with Dual Depth DTI Produced by thick-film epitaxial process
Toshifumi Yokoyama, Yoshihiro Noguchi, Yoshiaki Nishi, Masafumi Tsutsui, Masahiko Takeuchi, Masahiro Oda (TPSCo), Fenigstein Amos (Tower) |
We developed a 2.2um Backside Illuminated (BSI) Global Shutter (GS) pixel with true charge-domain Correlated Double Samp... [more] |
IST2025-40
pp.17-20 |
| IEICE-ICD, IEICE-SDM, IST [detail] |
2016-08-01
14:30 |
Osaka |
Central Electric Club |
[Invited Talk]
Novel Pixel Structure with Stacked Deep Photodiode to Achieve High NIR Sensitivity and High MTF
Hiroki Takahashi, Hiroshi Tanaka, Masahiro Oda, Mitsuyoshi Ando, Naoto Niisoe (TPSCo), Shinichi Kawai, Takuya Asano, Mitsugu Yoshita, Tohru Yamada (PSCS) |
Novel pixel structure with Stacked Deep Photodiode (SDP) has been newly developed for both high Near Infra-Red (NIR) sen... [more] |
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| ME, IEICE-BS |
2009-12-04
11:45 |
Nagano |
Nagano Prefecture General Industrial Technology Center |
A discussion on asymmetric biometric authentication based on G3C
Masahiro Oda, Yoshimasa Watanabe, Takumi Yamamoto (Shizuoka Univ), Hiroaki Kikuchi (Tokai Univ), Wakaha Ogata (Tokyo Institute of Technology Univ), Masakatsu Nishigaki (Shizuoka Univ) |
[more] |
ME2009-227
pp.53-56 |
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