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Committee Date Time Place Paper Title / Authors Abstract Paper #
IDY, IEICE-EID, IEE-EDD 2013-01-25
10:10
Shizuoka Shizuoka Univ. Fabrication and properties of Oxide TFT with an IGZO/AlOx stack prepared by non-vacuum process "mist CVD"
Toshiyuki Kawaharamura, Takayuki Uchida, Dapeng Wang, Masaru Sanada, Mamoru Furuta (KUT)
Last year, oxide TFT consisting of channel layer (IGZO) (47 nm) and gate insulator (AlOx) (116 nm) was fabricated by mis... [more] IDY2013-8
pp.73-76
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