| Paper Abstract and Keywords |
| Presentation |
2013-01-25 10:10
Fabrication and properties of Oxide TFT with an IGZO/AlOx stack prepared by non-vacuum process "mist CVD"
Toshiyuki Kawaharamura, Takayuki Uchida, Dapeng Wang, Masaru Sanada, Mamoru Furuta (KUT) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
Last year, oxide TFT consisting of channel layer (IGZO) (47 nm) and gate insulator (AlOx) (116 nm) was fabricated by mist CVD, which can be operated at an atmospheric pressure and is effective for the growth of metal oxide thin films, and an oxide TFT with an IGZO/AlOx stack exhibited the field-effect mobility (μlin) and on/off ratio of 4.2 cm2/(V・s) and over 108, respectively. Based on the experimental results, the properties of oxide TFT with an IGZO/AlOx stack were got better and better by an interface treatment, low-temperature growth of gate insulator, and improvement of active layer. Currently, an oxide TFT with an IGZO/AlOx stack exhibited the field-effect mobility (μlin) and subthreshold swing (S) of 7.7 cm2/(V・s) and 0.32 V/dec., respectively. The characteristics of this oxide TFT are equivalent to an IGZO TFT produced under a vacuum process. The result is an important first step in non-vacuum (atmospheric pressure) process conversion of the oxide TFT. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
Oxide TFT / IGZO / AlOx / mist CVD / / / / |
| Reference Info. |
ITE Tech. Rep., vol. 37, no. 2, IDY2013-8, pp. 73-76, Jan. 2013. |
| Paper # |
IDY2013-8 |
| Date of Issue |
2013-01-17 (IDY) |
| ISSN |
Print edition: ISSN 1342-6893 |
| Download PDF |
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| Conference Information |
| Committee |
IDY IEICE-EID IEE-EDD |
| Conference Date |
2013-01-24 - 2013-01-25 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
Shizuoka Univ. |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
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| Paper Information |
| Registration To |
IDY |
| Conference Code |
2013-01-IDY-EID-EDD |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Fabrication and properties of Oxide TFT with an IGZO/AlOx stack prepared by non-vacuum process "mist CVD" |
| Sub Title (in English) |
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| Keyword(1) |
Oxide TFT |
| Keyword(2) |
IGZO |
| Keyword(3) |
AlOx |
| Keyword(4) |
mist CVD |
| Keyword(5) |
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| 1st Author's Name |
Toshiyuki Kawaharamura |
| 1st Author's Affiliation |
Kochi University of Technology (KUT) |
| 2nd Author's Name |
Takayuki Uchida |
| 2nd Author's Affiliation |
Kochi University of Technology (KUT) |
| 3rd Author's Name |
Dapeng Wang |
| 3rd Author's Affiliation |
Kochi University of Technology (KUT) |
| 4th Author's Name |
Masaru Sanada |
| 4th Author's Affiliation |
Kochi University of Technology (KUT) |
| 5th Author's Name |
Mamoru Furuta |
| 5th Author's Affiliation |
Kochi University of Technology (KUT) |
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| Speaker |
Author-1 |
| Date Time |
2013-01-25 10:10:00 |
| Presentation Time |
8 minutes |
| Registration for |
IDY |
| Paper # |
IDY2013-8 |
| Volume (vol) |
vol.37 |
| Number (no) |
no.2 |
| Page |
pp.73-76 |
| #Pages |
4 |
| Date of Issue |
2013-01-17 (IDY) |
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