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Paper Abstract and Keywords
Presentation 2013-01-25 10:10
Fabrication and properties of Oxide TFT with an IGZO/AlOx stack prepared by non-vacuum process "mist CVD"
Toshiyuki Kawaharamura, Takayuki Uchida, Dapeng Wang, Masaru Sanada, Mamoru Furuta (KUT)
Abstract (in Japanese) (See Japanese page) 
(in English) Last year, oxide TFT consisting of channel layer (IGZO) (47 nm) and gate insulator (AlOx) (116 nm) was fabricated by mist CVD, which can be operated at an atmospheric pressure and is effective for the growth of metal oxide thin films, and an oxide TFT with an IGZO/AlOx stack exhibited the field-effect mobility (μlin) and on/off ratio of 4.2 cm2/(V・s) and over 108, respectively. Based on the experimental results, the properties of oxide TFT with an IGZO/AlOx stack were got better and better by an interface treatment, low-temperature growth of gate insulator, and improvement of active layer. Currently, an oxide TFT with an IGZO/AlOx stack exhibited the field-effect mobility (μlin) and subthreshold swing (S) of 7.7 cm2/(V・s) and 0.32 V/dec., respectively. The characteristics of this oxide TFT are equivalent to an IGZO TFT produced under a vacuum process. The result is an important first step in non-vacuum (atmospheric pressure) process conversion of the oxide TFT.
Keyword (in Japanese) (See Japanese page) 
(in English) Oxide TFT / IGZO / AlOx / mist CVD / / / /  
Reference Info. ITE Tech. Rep., vol. 37, no. 2, IDY2013-8, pp. 73-76, Jan. 2013.
Paper # IDY2013-8 
Date of Issue 2013-01-17 (IDY) 
ISSN Print edition: ISSN 1342-6893  Online edition: ISSN 2424-1970

Conference Information
Committee IDY IEICE-EID IEE-EDD  
Conference Date 2013-01-24 - 2013-01-25 
Place (in Japanese) (See Japanese page) 
Place (in English) Shizuoka Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To IDY 
Conference Code 2013-01-IDY-EID-EDD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication and properties of Oxide TFT with an IGZO/AlOx stack prepared by non-vacuum process "mist CVD" 
Sub Title (in English)  
Keyword(1) Oxide TFT  
Keyword(2) IGZO  
Keyword(3) AlOx  
Keyword(4) mist CVD  
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1st Author's Name Toshiyuki Kawaharamura  
1st Author's Affiliation Kochi University of Technology (KUT)
2nd Author's Name Takayuki Uchida  
2nd Author's Affiliation Kochi University of Technology (KUT)
3rd Author's Name Dapeng Wang  
3rd Author's Affiliation Kochi University of Technology (KUT)
4th Author's Name Masaru Sanada  
4th Author's Affiliation Kochi University of Technology (KUT)
5th Author's Name Mamoru Furuta  
5th Author's Affiliation Kochi University of Technology (KUT)
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Speaker
Date Time 2013-01-25 10:10:00 
Presentation Time
Registration for IDY 
Paper # ITE-IDY2013-8 
Volume (vol) ITE-37 
Number (no) no.2 
Page pp.73-76 
#Pages ITE-4 
Date of Issue ITE-IDY-2013-01-17 


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