| Paper Abstract and Keywords |
| Presentation |
2010-03-26 16:10
0.9um Pitch Pixel CMOS Image Sensor Device Design Methodology Kazuichiro Itonaga, Kyohei Mizuta, Toyotaka Kataoka (Sony), Masashi Yanagita, Shintaro Yamauchi (SCK), Ikeda Harumi, Tsutomu Haruta, Shizunori Matsumoto (Sony), Masanori Harasawa, Takeshi Matsuda, Akira Matsumoto (SCK), Ikue Mizuno (Sony), Takatoshi Kameshima, Iwao Sugiura (SCK), Teruo Hirayama (Sony) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
We proposed the constant-light-diffraction methodology in order to design the CMOS image sensor (CIS).
We developed a reliable guideline, and verified it using CISs with various pixel pitches and number of metal wiring layers.
Using this guideline, we realized the first ever successful fabrication of 1.12 and 0.9m pitch CISs and simulated that the light shield technology node in order to satisfy the guideline for the future. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
image sensor / quantum Efficiency / pixel pitch / diffraction light / apature ratio / light shield / FSI / BSI |
| Reference Info. |
ITE Tech. Rep., vol. 34, no. 16, IST2010-20, pp. 55-58, March 2010. |
| Paper # |
IST2010-20 |
| Date of Issue |
2010-03-19 (IST, CE) |
| ISSN |
Print edition: ISSN 1342-6893 |
| Download PDF |
|