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Paper Abstract and Keywords
Presentation 2011-07-22 16:10
An 0.5V Transceiver in 65nm CMOS for High-Speed Wireless Proximity Interface
Takeshi Matsubara (Keio Univ.), Isamu Hayashi (STARC), Abul Hasan Johari, Satoshi Kumaki, Kaoru Kohira, Tadahiro kuroda, Hiroki Ishikuro (Keio Univ.)
Abstract (in Japanese) (See Japanese page) 
(in English) This paper presents a pulse-based inductive-coupling transceiver in 65nm CMOS for High-speed wireless proximity communication. The transceiver operates at 0.5V supply voltage. A pulse bootstrap circuit and a common drain output stage enables transmitter to operate at ultralow voltage. In the receiver, a gain boosted common-gate amplifier is used to reduce the input impedance and suppress the ringing of received pulse signal. The data rate and energy efficiency are 1.1Gb/s/ch and 0.91pJ/bit, respectively at 0.5V supply voltage. The data rate can be increased to 1.7Gb/s/ch at 0.75V.
Keyword (in Japanese) (See Japanese page) 
(in English) inductive-coupling / ultra-low voltage / bootstrap / high speed interface / proximity communication / / /  
Reference Info. ITE Tech. Rep.
Paper #  
Date of Issue  
ISSN Print edition: ISSN 1342-6893  Online edition: ISSN 2424-1970
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Conference Information
Committee IST IEICE-ICD  
Conference Date 2011-07-21 - 2011-07-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Hiroshima Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Analog, Mixed analog and digital, RF, and sensor interface circuitry 
Paper Information
Registration To IEICE-ICD 
Conference Code 2011-07-ICD-IST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) An 0.5V Transceiver in 65nm CMOS for High-Speed Wireless Proximity Interface 
Sub Title (in English)  
Keyword(1) inductive-coupling  
Keyword(2) ultra-low voltage  
Keyword(3) bootstrap  
Keyword(4) high speed interface  
Keyword(5) proximity communication  
1st Author's Name Takeshi Matsubara  
1st Author's Affiliation Keio University (Keio Univ.)
2nd Author's Name Isamu Hayashi  
2nd Author's Affiliation Semiconductor Technology Academic Research Center (STARC)
3rd Author's Name Abul Hasan Johari  
3rd Author's Affiliation Keio University (Keio Univ.)
4th Author's Name Satoshi Kumaki  
4th Author's Affiliation Keio University (Keio Univ.)
5th Author's Name Kaoru Kohira  
5th Author's Affiliation Keio University (Keio Univ.)
6th Author's Name Tadahiro kuroda  
6th Author's Affiliation Keio University (Keio Univ.)
7th Author's Name Hiroki Ishikuro  
7th Author's Affiliation Keio University (Keio Univ.)
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Date Time 2011-07-22 16:10:00 
Presentation Time 25 
Registration for IEICE-ICD 
Paper #  
Volume (vol) ITE-35 
Number (no)  
#Pages ITE- 
Date of Issue  

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