Paper Abstract and Keywords |
Presentation |
2014-03-14 12:00
Three-dimensional Structures for High Saturation Signals and Crosstalk Suppression in 1.20 um Pixel Back-Illuminated CMOS Image Sensor Takekazu Shinohara, Kazufumi Watanabe (Sony Semiconductor), Takashi Abe, Kazunobu Ohta (Sony), Hajime Nakayama (Sony Semiconductor), Takafumi Morikawa, Keiichi Ohno (Sony), Dai Sugimoto (Sony Semiconductor), Shingo Kadomura, Teruo Hirayama (Sony) |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We propose two technologies, vertical transfer gate (VTG) and buried shielding metal (BSM), that can be applied to 1.20 μm pixel back-illuminated CMOS image sensor (BI-CIS). With the VTG and BSM, the new pixel design exhibited 60% higher saturation signals and 50% lower crosstalk at wide chief ray angle (CRA). Even though both technologies have a three-dimensional structure formed on Si substrate, our process technology enabled them to be applied without increasing white blemish count or dark current degradation. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
CMOS image sensor / Back-illuminated CIS / three-dimensional structure / saturation signals / crosstalk / VTG / BSM / |
Reference Info. |
ITE Tech. Rep., vol. 38, no. 15, IST2014-10, pp. 7-10, March 2014. |
Paper # |
IST2014-10 |
Date of Issue |
2014-03-07 (IST) |
ISSN |
Print edition: ISSN 1342-6893 |
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