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Paper Abstract and Keywords
Presentation 2014-07-03 13:55
[Invited Talk] Characterization of Individual Oxide Traps Contributing to Multi-Trap Random Telegraph Noise in Nano-Scaled MOSFETs
Toshiaki Tsuchiya (Shimane Univ.)
Abstract (in Japanese) (See Japanese page) 
(in English) We propose a novel method for characterizing the oxide traps that participate in random telegraph noise (RTN) by using charging history effects on the traps. In this method, the variation in the frequency of the high/low drain current derived from RTN with the charging history is monitored instead of the time-scale parameters that are usually used. Moreover, we also propose a method to determine the number and charging conditions of the traps. These methods are particularly effective for characterizing individual oxide traps in multi-trap RTN.
Keyword (in Japanese) (See Japanese page) 
(in English) MOSFET / Random Telegraph Noise / RTN / Charging History Effect / Oxide Traps / / /  
Reference Info. ITE Tech. Rep., vol. 38, no. 26, IST2014-32, pp. 29-30, July 2014.
Paper # IST2014-32 
Date of Issue 2014-06-26 (IST) 
ISSN Print edition: ISSN 1342-6893  Online edition: ISSN 2424-1970
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Conference Information
Committee IST IEICE-ICD  
Conference Date 2014-07-03 - 2014-07-04 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English) Analog circuit, Mixed signal, RF and sensor I/F. 
Paper Information
Registration To IST 
Conference Code 2014-07-IST-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Characterization of Individual Oxide Traps Contributing to Multi-Trap Random Telegraph Noise in Nano-Scaled MOSFETs 
Sub Title (in English)  
Keyword(1) MOSFET  
Keyword(2) Random Telegraph Noise  
Keyword(3) RTN  
Keyword(4) Charging History Effect  
Keyword(5) Oxide Traps  
1st Author's Name Toshiaki Tsuchiya  
1st Author's Affiliation Shimane University (Shimane Univ.)
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Date Time 2014-07-03 13:55:00 
Presentation Time 50 
Registration for IST 
Paper # ITE-IST2014-32 
Volume (vol) ITE-38 
Number (no) no.26 
Page pp.29-30 
#Pages ITE-2 
Date of Issue ITE-IST-2014-06-26 

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