| Paper Abstract and Keywords |
| Presentation |
2015-07-03 09:30
[Invited Talk]
Oxide Semiconductor and its Application to Image Sensors
Shuhei Maeda, Takuro Ohmaru, Takashi Nakagawa, Yuki Okamoto, Munehiro Kozuma, Seiichi Yoneda, Hiroki Inoue, Yoshiyuki Kurokawa, Takayuki Ikeda, Yoshinori Ieda, Naoto Yamade, Hidekazu Miyairi (SEL), Makoto Ikeda (Univ. of Tokyo), Yoshitaka Yamamoto, Shunpei Yamazaki (SEL) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
An FET containing crystalline In-Ga-Zn-O (IGZO) with a novel crystal structure called a c-axis-aligned a-b-plane-anchored crystal (CAAC) structure exhibits high reliability and ultralow off-state current. CAAC-IGZO technology is therefore promising key technology for next-generation displays and contributes to mass production of liquid crystal displays. Meanwhile, we have investigated the feasibility of applying the CAAC-IGZO technology to LSI by utilizing the ultralow off-state current of a CAAC-IGZO FET and have pioneered the development of LSI using oxide semiconductors. Our success in developing a hybrid process involving a CMOS FET and a CAAC-IGZO FET promotes the development of nonvolatile memory, normally off CPU, normally off FPGA, and image sensors. This paper reviews the application of the CAAC-IGZO technology to image sensors. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
CAAC-IGZO / Off-state current / Global shutter / Vision sensor / Differential frame / Motion capture / / |
| Reference Info. |
ITE Tech. Rep., vol. 39, no. 22, IST2015-41, pp. 21-26, July 2015. |
| Paper # |
IST2015-41 |
| Date of Issue |
2015-06-25 (IST) |
| ISSN |
Print edition: ISSN 1342-6893 Online edition: ISSN 2424-1970 |
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